Abstract:Recent advancement in the switching of perpendicular magnetic tunnel junctions with an electric field has been a milestone for realizing ultra-low energy memory and computing devices. To integrate with current spin-transfer torque-magnetic tunnel junction and spin–orbit torque-magnetic tunnel junction devices, the typical linear fJ/V m range voltage controlled magnetic anisotropy (VCMA) needs to be significantly enhanced with approaches that include new materials or stack engineering. A possible bidirectional and 1.1 pJ/V m VCMA effect has been predicted by using heavily electron-depleted Fe/MgO interfaces. To improve upon existing VCMA technology, we have proposed inserting high work function materials underneath the magnetic layer. This will deplete electrons from the magnetic layer biasing the gating window into the electron-depleted regime, where the pJ/V m and bidirectional VCMA effect was predicted. We have demonstrated tunable control of the Ta/Pd(x)/Ta underlayer's work function. By varying the Pd thickness (x) from 0 to 10 nm, we have observed a tunable change in the Ta layer's work function from 4.32 to 4.90 eV. To investigate the extent of the electron depletion as a function of the Pd thickness in the underlayer, we have performed DFT calculations on supercells of Ta/Pd(x)/Ta/CoFe/MgO, which demonstrate that electron depletion will not be fully screened at the CoFe/MgO interface. Gated pillar devices with Hall cross geometries were fabricated and tested to extract the anisotropy change as a function of applied gate voltage for samples with various Pd thicknesses. The electron-depleted Pd samples show three to six times VCMA improvement compared to the electron accumulated Ta control sample.

Enhancement of Voltage-Controlled Magnetic Anisotropy in Orthogonally-Magnetized CoFeB/MgO/CoFeB

Large Voltage Control of Magnetic Anisotropy in CoFeB/MgO/OX Structures at Room Temperature

Enhancement of Voltage Controlled Magnetic Anisotropy (VCMA) Through Electron Depletion

Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB|MgO interface

Giant unilateral electric-field control of magnetic anisotropy in MgO/Rh2CoSb heterojunctions

Voltage control of magnetic anisotropy in epitaxial Ru/Co2FeAl/MgO heterostructures

Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer

Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures

Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution

Highly efficient voltage-controlled magnetism in HfZrO/CoFeB hybrid film and Hall device

Magnetic Property Enhancement of Co0.85w0.15 Magnetic Films by Addition of Vanadium in Ru Buffer Layer

Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB

Interfacial Resonance States-Induced Negative Tunneling Magneto-Resistance in Orthogonally Magnetized CoFeB/MgO/CoFeB

Large in-plane piezo-strain enhanced voltage control of magnetic anisotropy in Si-compatible multiferroic thin films

Experimental demonstration of voltage-gated spin-orbit torque switching in an antiferromagnet/ferromagnet structure

Large Field-like Spin-Orbit Torque and Enhanced Magnetization Switching Efficiency Utilizing Amorphous Mo

Voltage-controlled magnetic anisotropy effect through a high- k MgO/ZrO 2 /MgO hybrid tunneling barrier

Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field

Origin of Interfacial Perpendicular Magnetic Anisotropy in Mgo/Cofe/Metallic Capping Layer Structures

Stochastic Aware Modeling of Voltage Controlled Magnetic Anisotropy MRAM

Design of a Voltage‐Controlled Magnetic Random Access Memory Based on Anisotropic Magnetoresistance in a Single Magnetic Layer