Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer

Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev

DOI: https://doi.org/10.1103/PhysRevApplied.15.024017

2020-07-31

Abstract:Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Based on density functional theory (DFT) calculations, we propose an alternative design of magnetic tunnel junctions comprising Fe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magnetic anisotropy (PMA) up to several mJ/m2, leveraging the interfacial perpendicular anisotropy of Fe/MgO along with a stress-induced bulk PMA discovered within bcc Co. This giant enhancement dominates the demagnetizing energy when increasing the film thickness. The tunneling magnetoresistance (TMR) estimated from the Julliere model is comparable with that of the pure Fe/MgO case. We discuss the advantages and pitfalls of a real-life fabrication of the structure and propose the Fe(3ML)Co(4ML)Fe(3ML) as a storage layer for MgO-based STT-MRAM cells. The large PMA in strained bcc Co is explained in the framework of Bruno's model by the MgO-imposed strain and consequent changes in the energies of dyz and dz2 minority-spin bands.

Materials Science,Mesoscale and Nanoscale Physics,Applied Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to significantly enhance the perpendicular magnetic anisotropy (PMA) of MgO - based magnetic tunnel junctions (MTJs) in order to improve the thermal stability and the scalability of size reduction of spin - transfer - torque magnetic random - access memory (STT - MRAM).

### Specific problems and solutions:

1. **Background and challenges**:
- STT - MRAM depends on magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. These MTJs need to have high tunneling magnetoresistance (TMR), efficient spin - transfer - torque, and high magnetic anisotropy to ensure good read - write performance and thermal stability.
- In current CoFeB|MgO MTJs, when the cell diameter is less than 30nm, the perpendicular magnetic anisotropy becomes too weak, resulting in thermal fluctuations affecting the memory retention ability.

2. **Limitations of existing methods**:
- Using heavy metals such as Pt or Pd can enhance PMA, but it will increase the spin - orbit coupling parameter ξ, which will lead to an increase in Gilbert damping and further increase the spin - transfer - torque switching current.
- Methods based on 3d metal elements (such as Fe - Ni or Co - Ni alternating layers) avoid the above problems, but the structure is complex and requires a relatively high deposition/annealing temperature, which is not conducive to practical applications.

3. **Solutions proposed in the paper**:
- By introducing a Co intermediate layer into the traditional Fe|MgO MTJ, the stress - induced PMA of Co is utilized to significantly enhance the perpendicular magnetic anisotropy.
- A new MTJ structure is proposed: MgO|Fe(n)Co(m)Fe(n)|MgO, where n ≥ 2 and m ≥ 3. This structure not only enhances PMA but also maintains a high TMR value similar to that of pure Fe|MgO.

4. **Theoretical support and experimental verification**:
- Using density functional theory (DFT) calculations, it is proved that the strain caused by the introduction of MgO in the Co layer can significantly improve PMA.
- The Bruno model explains how the strain changes the electronic structure of Co, especially the energy difference between the minority - spin bands dz² and dyz, resulting in a significant enhancement of PMA.

### Summary:
The paper proposes a new type of MTJ structure by introducing a Co intermediate layer and combining the MgO strain effect, which solves the problem of insufficient PMA in traditional MTJs at small sizes and provides a new way to achieve higher - density and more stable STT - MRAM.