Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer

Huadong Gan,Roger Malmhall,Zihui Wang,Bing K Yen,Jing Zhang,Xiaobin Wang,Yuchen Zhou,Xiaojie Hao,Dongha Jung,Kimihiro Satoh,Yiming Huai

DOI: https://doi.org/10.1063/1.4901439

IF: 4

2014-11-10

Applied Physics Letters

Abstract:Integration of high density spin transfer torque magnetoresistance random access memory requires a thin stack (less than 15 nm) of perpendicular magnetic tunnel junction (p-MTJ). We propose an innovative approach to solve this challenging problem by reducing the thickness and/or moment of the reference layer. A thin reference layer structure of CoFeB/Ta/Co/Pd/Co has 60% magnetic moment of the conventional thick structure including [Co/Pd] multilayers. We demonstrate that the perpendicular magnetization of the CoFeB/Ta/Co/Pd/Co structure can be realized by anti-ferromagnetically coupling to a pinned layer with strong perpendicular anisotropy via Ruderman-Kittel-Kasuya-Yosida exchange interaction. The pMTJ with thin CoFeB/Ta/Co/Pd/Co reference layer has a comparable TMR ratio (near 80%) as that with thick reference layer after annealing at 280 °C. The pMTJ with thin reference layer has a total thickness less than 15 nm, thereby significantly increasing the etching margin required for integration of high density pMTJ array on wafers with form factor of 300 mm and beyond.

physics, applied