Giant Perpendicular Magnetic Anisotropy in Mo‐Based Double‐Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions

Houyi Cheng,Jingle Chen,Shouzhong Peng,Boyu Zhang,Zilu Wang,Daoqian Zhu,Kewen Shi,Sylvain Eimer,Xinran Wang,Zongxia Guo,Yong Xu,Danrong Xiong,Kaihua Cao,Weisheng Zhao
DOI: https://doi.org/10.1002/aelm.202000271
IF: 6.2
2020-07-15
Advanced Electronic Materials
Abstract:<p>A strong perpendicular magnetic anisotropy (PMA) and a high thermal stability are essential for long‐term stable storage of data in PMA‐based magnetic tunnel junctions (p‐MTJs). This work investigates the magnetic anisotropy of the MgO/CoFeB/X/CoFeB/MgO double‐interface free layer stacks, where X represents the spacer material. After annealing at 350 °C for an hour, interfacial magnetic anisotropy (<i>K </i><sub>i</sub>) as high as 4.06 mJ m<sup>−2</sup> is obtained in the MgO/CoFeB/Mo (0.4 nm)/CoFeB/MgO stacks, much higher than those for Ta‐ and W‐based films. Experimental and first‐principle calculation results demonstrate that bulk PMA plays a great role in the Mo‐based structure, which is often negligible in Ta‐ and W‐based structures. Moreover, a strong PMA is achieved after annealing at 500 °C, which is attributed to the weak interdiffusion and good uniformity as shown in high‐resolution transmission electron microscopy and energy‐dispersive X‐ray spectroscopy results. These findings help to understand the origin of strong PMA in Mo‐based structures and show the promising prospect of using this structure for high‐packing‐density p‐MTJs and other spintronic device applications down to 10 nm scale.</p>
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
What problem does this paper attempt to address?
This paper aims to solve the problem of how to realize magnetic tunnel junctions (MTJs) with stronger perpendicular magnetic anisotropy and higher thermal stability in high - density storage applications. Specifically, the researchers explored optimizing the performance of the MgO/CoFeB/X/CoFeB/MgO double - interface free - layer structure by using different spacer layer materials (such as Ta, W and Mo), in order to obtain higher perpendicular magnetic anisotropy (PMA) and better thermal stability, thus meeting the requirements of next - generation spin - transfer - torque magnetic random - access memory (STT - MRAM) and other spintronic devices. The key findings of the paper are that, compared with Ta - and W - based structures, the Mo - based structure exhibits the strongest perpendicular magnetic anisotropy (4.06 mJ m\(^{-2}\)), and this strong PMA can still maintain a relatively high level (2.93 mJ m\(^{-2}\)) after annealing at 500°C. In addition, experiments and first - principles calculations show that the bulk effect in the Mo - based structure plays an important role in magnetic anisotropy, which is different from the situation in Ta - and W - based structures. These results not only help to understand the origin of the strong PMA in the Mo - based structure, but also show its application prospects in high - density STT - MRAM devices.