High Thermal Stability of Perpendicular Magnetic Anisotropy in the MgO/CoFeB/W Thin Films

Y. Q. Guo,H. Bai,Q. R. Cui,L. M. Wang,Y. C. Zhao,X. Z. Zhan,T. Zhu,H. X. Yang,Y. Gao,C. Q. Hu,S. P. Shen,C. L. He,S. G. Wang
DOI: https://doi.org/10.1016/j.apsusc.2021.150857
IF: 6.7
2021-01-01
Applied Surface Science
Abstract:Perpendicular magnetic anisotropy (PMA) with high thermal stability is greatly essential for ultrahigh density and stable data storage devices. Here, the effect of vacuum annealing on PMA of MgO/CoFeB/VV stacks was investigated. It was shown that the PMA can be well maintained after annealing at 590 degrees C, which is much higher than that in traditional Ta-based PMA films. Using the polarized neutron reflectometry, the Co-Fe atoms proportion of the CoFeB/W interface was deliberately determined at different temperatures. It is found that the Co and Fe atoms of CoFeB/W interface had strongly segregation after annealing at 590 degrees C Furthermore, the effect of different proportion of Co-Fe elements on the PMA was systematically studied by the first-principles calculation. Our first-principles calculation and further analysis reveal that different Co-Fe proportion leads to the modification of orbital hybridization between d(xy) and d(x2-y2) orbitals at the CoFe/W interface, indicating that the interfacial segregation can enhance the PMA. These findings unveil the origin of PMA in W-based devices with high thermal stability and can promote their future industrial applications.
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