Abstract:Spin-orbit torque (SOT) has great potential application for developing next-generation magnetic random-access memory (MRAM). For efficient utilization of the SOT MRAM, most efforts have been focused on reducing power consumption by improving the SOT efficiency. Here, we report that inserting an ultrathin ${\mathrm{Ir}}_{x}{\mathrm{Mn}}_{1\text{\ensuremath{-}}x}$ (or ${\mathrm{Pt}}_{x}{\mathrm{Mn}}_{1\text{\ensuremath{-}}x}$) layer at the heavy-metal--ferromagnet interface is an effective strategy to increase the SOT efficiency. By performing spin-torque ferromagnetic magnetic resonance and second-harmonic Hall measurements, we found that the absolute values of the charge-to-spin conversion efficiency increase from 0.09 for annealed W-${\mathrm{Co}}_{20}{\mathrm{Fe}}_{60}{\mathrm{B}}_{20}$ (CFB) sample to 0.15 for annealed $\mathrm{W}\text{\ensuremath{-}}{\mathrm{Ir}}_{x}{\mathrm{Mn}}_{1\text{\ensuremath{-}}x}$-CFB sample. The enhancement of the SOT efficiency can be attributed to the reduction of interfacial spin-memory loss at the annealed $\mathrm{W}\text{\ensuremath{-}}{\mathrm{Ir}}_{x}{\mathrm{Mn}}_{1\text{\ensuremath{-}}x}$ (or ${\mathrm{Pt}}_{x}{\mathrm{Mn}}_{1\text{\ensuremath{-}}x})\text{\ensuremath{-}}\mathrm{CFB}$ samples. Moreover, current-driven magnetization switching with a reduced critical current density has been achieved in the annealed $\mathrm{W}\text{\ensuremath{-}}{\mathrm{Ir}}_{x}{\mathrm{Mn}}_{1\text{\ensuremath{-}}x}\text{\ensuremath{-}}\mathrm{CFB}$ samples. This study highlights the significant roles of the ${\mathrm{Ir}}_{x}{\mathrm{Mn}}_{1\text{\ensuremath{-}}x}$ (or ${\mathrm{Pt}}_{x}{\mathrm{Mn}}_{1\text{\ensuremath{-}}x}$) insertion layer on improving the SOT efficiency and provides a strategy to improve the SOT efficiency through nanoengineering of the ${\mathrm{Ir}}_{x}{\mathrm{Mn}}_{1\text{\ensuremath{-}}x}$ (or ${\mathrm{Pt}}_{x}{\mathrm{Mn}}_{1\text{\ensuremath{-}}x}$) insertion layer for energy-efficient SOT devices.

Large Field-like Spin-Orbit Torque and Enhanced Magnetization Switching Efficiency Utilizing Amorphous Mo

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Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer

Field-free spin-orbit torque switching enabled by interlayer Dzyaloshinskii-Moriya interaction

Field‐Free Spin‐Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source (Adv. Electron. Mater. 4/2024)

Magnetization Switching in Atom-Thick Mo Engineered Exchange Bias-Based SOT-MRAM

Spin-orbit-torque-driven Multilevel Switching in Ta/CoFeB/MgO Structures Without Initialization

Modulation of Field-Like Spin Orbit Torque in Heavy Metal/ferromagnet Heterostructures

Field-Free Spin–Orbit Torque Switching via Oscillatory Interlayer Dzyaloshinskii–Moriya Interaction for Advanced Memory Applications

Field-free Switching Enabled by Interplay of Spin-Orbit Torque and Interlayer Dzyaloshinskii-Moriya Interaction

Enhanced Spin-Orbit-Torque Efficiency in W-Co20Fe60B20 Multilayers by Insertion of an IrxMn1-x or PtxMn1-x Layer

Advanced Spin Orbit Torque Magnetic Random Access Memory with Field-Free Switching Schemes (Invited)

All-electrical manipulation of magnetization in magnetic tunnel junction via spin–orbit torque

Enhanced Spin-Orbit-Torque Efficiency in Multilayers by Insertion of an or Layer

Large Spin-Orbit Torque Efficiency Enhanced by Magnetic Structure of Collinear Antiferromagnet IrMn

Harnessing Orbital Hall Effect in Spin-Orbit Torque MRAM

Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer

Enhanced Spin-Orbit-Torque Efficiency in W−Co20Fe60B

Evaluation Of Ultrahigh-Speed Magnetic Memories Using Field-Free Spin-Orbit Torque

Field‐Free Spin‐Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect

Spin-Orbit Torque Magnetization Switching in MoTe2/Permalloy Heterostructures