Strain-Mediated Multilevel Ferroelectric Random Access Memory Operating Through A Magnetic Field

Jie Wang,Koyo Nagano,Takahiro Shimada,Takayuki Kitamura

DOI: https://doi.org/10.1039/c4ra07013e

IF: 4.036

2014-01-01

RSC Advances

Abstract:Three hysteresis loops between the toroidal moment and vorticity in the ferroelectric memory cell with four stable vortex states.

What problem does this paper attempt to address?

Electric-Field Control Of Strain-Mediated Magnetoelectric Random Access Memory

Jiamian Hu,Zheng Li,Jing Wang,Cewen Nan

DOI: https://doi.org/10.1063/1.3373593

IF: 2.877

2010-01-01

Journal of Applied Physics

Abstract:A strain-mediated magnetoelectric random access memory with electric-field-writing is presented, which consists of a magnetic tunnel junction (MTJ) in intimate contact with a ferroelectric (FE) layer. The calculations show that the magnetization vector in the free layer of the MTJ unit can switch in-plane by 90 S upon applying an appropriate electric field to the FE layer, as compared to the common 180 S reversal induced by magnetic field or spin-current. A perfect interface between the FE layer and the MTJ is assumed. The free layers used for illustration include either (001)-oriented or polycrystalline magnetic films of Fe-Co alloy, CoFe(2)O(4) (CFO), Ni, and Fe(3)O(4). Among them, the (001)-oriented FeCo and CFO films with positive magnetocrystalline anisotropy constant (i.e., K(1)>0) show an abrupt magnetization switching, while a gradual magnetization switching takes place in the (001)-oriented Ni and Fe(3)O(4) films with K(1)<0 as well as the polycrystalline films. Such electric-field-induced in-plane magnetization switching can result in a remarkable change in the MTJ's electric resistance. In particular, hysteretic dependence of the device resistance on the applied electric field is obtained for the cases of the (001)-oriented FeCo and CFO free layers that exhibit the abrupt magnetization switching, whereby a nonvolatile information storage process can be achieved. The influence of the shape of the free layer on both magnetization and resistance switching features is discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3373593]
Multilevel hysteresis loop engineered with ferroelectric nano-metamaterials

Le Van Lich,Takahiro Shimada,Shahmohammadi Sepideh,Jie Wang,Takayuki Kitamura

DOI: https://doi.org/10.1016/j.actamat.2016.11.065

IF: 9.4

2017-01-01

Acta Materialia

Abstract:Polarization switching in ferroelectric and multiferroic materials provides a means of designing a broad range of multifunctional devices. To date, such applications have typically exploited 180° ferroelectric polarization switching, where the polarization vector can be alternated between parallel or anti-parallel to the external electric field, i.e., bi-states. However, the coupling between the direction of switching and the long-range order parameter puts a limit on the well-defined polarization state, hindering the use of polarization switching and the advancement of novel applications. Using the ferroelectric nano-metamaterial concept, we demonstrate here that successive polarization switching through multiple well-defined stable states with a long-range order parameter decoupled from the direction of switching can be achieved, and consequently, controllable and multilevel hysteresis loops are obtained under a unidirectional electric field. The equilibrium polarization configuration of stable states are tailored by designing a nanoporous ferroelectric structure based on the ferroelectric nano-metamaterial concept. The orientation of the homogeneous electric field is then controlled to achieve the desired polarization switching behavior and hence the hysteresis loop level, which can pass through all stable polarization states. In addition, a general rule for the nanostructure-state-level of switching is established, from which a high level of hysteresis loop can be designed and achieved. The present study provides a foundation for novel devices based on multilevel ferroelectric switching, such as multilevel data storage memory, multi-logic gates, and electromechanical devices with multilevel control.
Phase-field simulations of easily switchable vortex structure for multilevel low-power ferroelectric memory

Zhonglei Liu,Jinming Cao,Zhi Wang,Qiaoling Wang,Hua Hou,Yuhong Zhao

DOI: https://doi.org/10.1016/j.jmrt.2024.02.197

IF: 6.267

2024-03-06

Journal of Materials Research and Technology

Abstract:Ferroelectric materials with multi-directional polarization orders can form a variety of special domain structures, which have a wide range of applications. In this work, lead-free potassium sodium niobate ferroelectric thin films were simulated by solving the Time-Dependent-Landau-Ginzburg (TDLG) equation. Based on vortex topological structure characteristic of perovskite-type ferroelectric, domain types are simplified from 26 to 9 through virtual polarization vectors. By temperature selection, we accomplished a large easily switchable vortex structure with 20% side length. Based on this, as low as 0.04V/nm electric-field pulse was applied to explore vortex domain structures change. Under different low external electric-field pulses, conductance states change in vortex have been calculated and discussed systematically. Free energy computation results reveal that the domain wall (DW) conductance states primarily originate from the competition between electrostatic energy, gradient energy, and elastic energy. Finally, we propose the multilevel data ferroelectric memory through easily switchable vortex topological structures for the first time. Under electric-field pulses, diverse storage states were presented through 0/1 measurement of 8 positions. By achieving an easy-to-distinguish and robust-to-switch data map at the vortex structure, this work might provide a significant idea of vortex structure on low-power ferroelectric memory applications.

materials science, multidisciplinary,metallurgy & metallurgical engineering
A Simple Bilayered Magnetoelectric Random Access Memory Cell Based on Electric-Field Controllable Domain Structure

Jia-Mian Hu,Zheng Li,Jing Wang,Jing Ma,Y. H. Lin,C. W. Nan

DOI: https://doi.org/10.1063/1.3463408

IF: 2.877

2010-01-01

Journal of Applied Physics

Abstract:By considering the domain wall scattering in ferromagnetic striped-domain structure, we present a simple bilayered magnetoelectric random access memory cell with a ferromagnetic thin film grown on a ferroelectric layer. The calculations show that the striped-domain structure in the ferromagnetic film can change into a single-domain structure upon applying an electric field to the ferroelectric layer. As a result, the presence (absence) of the domain walls in response to the striped-domain (single-domain) state can cause an abrupt change in the film resistivity, which could be employed for memory applications accordingly.
A multilevel nonvolatile magnetoelectric memory based on memtranstor

Jianxin Shen,Junzhuang Cong,Dashan Shang,Yisheng Chai,Shipeng Shen,Kun Zhai,Young Sun

DOI: https://doi.org/10.48550/arXiv.1606.06852

2016-06-22

Abstract:The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient ({\alpha}) of multiferroics. Because the states of {\alpha} depends on the relative orientation between magnetization and polarization, one can reach different levels of {\alpha} by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of {\alpha} can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of {\alpha} is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.

Materials Science
Phase Field Simulation of Magnetization Vortex in Ferromagnetic Nanomaterials

Jie Wang,Guiping Li

2016-01-01

Abstract:Magnetization vortices in ferromagnetic nanostructures have attracted considerable attention due to their potential application in nanoscale memory devices. A magnetization vortex with in-plane curling magnetization and out-of-plane magnetization at the core is a unique stable state. The out-of-plane magnetization at the core can be switched from an upward state to a downward state or from a downward state to an upward state by a magnetic field or a spin-polarized current. This switchable property makes magnetization vortex a promising candidate for memory cells in future non-volatile data-storage devices. In this work, a real-space phase field model is developed to investigate the switching behavior of magnetization vortex in ferromagnetic nanostructures subjected to different mechanical strains. Based on the time-dependent Ginzburg-Landau (TDGL) equation, the phase field model takes into account the Dzyaloshinskii-Moriya (DM) interaction of magnetizations, which includes the coupling between the magnetization and magnetization gradient. The governing equations in the phase field model are solved simultaneously by means of a nonlinear finite elements method, which can be employed to simulate magnetization vortex without periodic boundary condition. The phase field simulations demonstrate that the vortex polarity of a circular ferromagnetic nanodot can be switched by torsion when the sign of the torsion is opposite to that of vortex chirality, whereas switching does not take place if the sign of torsion is the same as that of vortex chirality. The magneto-elastic coupling and demagnetization field play a decisive role in the polarity switching, which involves an intriguing interplay of magnetization, strain and demagnetization. The results suggest another way to control vortex polarity and vortex stability by mechanical field other than magnetic field and electric current. It is also found that the DM interaction has significant influence on the structure of the magnetization vortex. The DM interaction induces an out-of-plane magnetization on the edge of the vortex and enlarges the size of the vortex core. The magnitude of the out-of-plane magnetization at the vortex core and the edge increases with the increase of DM constant. Besides, the handedness of magnetization vortex also changes when the sign of DM constant changes.
Design of a Voltage‐Controlled Magnetic Random Access Memory Based on Anisotropic Magnetoresistance in a Single Magnetic Layer

Jia-Mian Hu,Zheng Li,Long-Qing Chen,Ce-Wen Nan

DOI: https://doi.org/10.1002/adma.201201004

2012-01-01

Advances in Materials

Abstract:A simple and fully gate-voltage-controlled magnetic random access memory is designed based on anisotropic magnetoresistance. This multiferroic memory device consists of just a single magnetic film grown on a ferroelectric layer with bistable in-plane anisotropic ferroelastic or piezo strains induced by out-of-plane voltages. It can simultaneously achieve ultrahigh storage density, ultralow energy consumption, and GHz high-speed operation at room temperature.
Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

Jiawei Wang,Aitian Chen,Peisen Li,Sen Zhang

DOI: https://doi.org/10.3390/ma14164623

IF: 3.4

2021-08-17

Materials

Abstract:Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn1/3Nb2/3O3)1−x-(PbTiO3)x] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Voltage Pulse Controlling Multilevel Data Ferroelectric Storage Memory with a Nonepitaxial Ultrathin Film

Pengfei Hou,Jinbin Wang,Xiangli Zhong,Yuan Zhang,Xiong Zhang,Congbing Tan,Bo Li

DOI: https://doi.org/10.1039/c6ra14388a

IF: 4.036

2016-01-01

RSC Advances

Abstract:Multilevel data ferroelectric storage memory is a breakthrough for addressing low density in ferroelectric random access memories.
Non-volatility Using Materials with Only Volatile Properties: Vertically Integrated Magnetoelectric Heterostructures and Their Potential for Multi-Level-cell Devices

Xiao Tang,Min Gao,Chung Ming Leung,Haosu Luo,Jiefang Li,Dwight Viehland

DOI: https://doi.org/10.1063/1.5094430

IF: 4

2019-01-01

Applied Physics Letters

Abstract:Different (1–3) heterostructures, such as BiFeO3-CoFe2O4 and BiFeO3-CuFe2O4 on Pb(Mg1/3Nb2/3)0.74Ti0.26O3 (PMN-26PT), were selected for study as possible materials for magnetoelectric (ME) random access memory. The (1–3) heterostructures were deposited, and multimagnetic states were found under different E-field (E) conditions. Upon removal of E, two possible remnant magnetization states remained stable. If an H-field (H) was also applied, two additional stable remnant magnetization states were found. Our investigations demonstrate (1–3) heterostructures with nonvolatility even though the individual phases/substrates had only volatile properties. This simplifies materials selection for multistate systems based on these heterostructures, averting difficulties with compositional nonuniformity and property repeatability, in particular, with regard to PMN-xPT crystal substrates. With such N≥4 magnetic state systems, a multilevel-cell memory device could readily be built with high ME coupling and numerous accessible magnetic states.
Nonvolatile Multilevel States in Multiferroic Tunnel Junctions

Mei Fang,Sangjian Zhang,Wenchao Zhang,Lu Jiang,Eric Vetter,Ho Nyung Lee,Xiaoshan Xu,Dali Sun,Jian Shen

DOI: https://doi.org/10.1103/PhysRevApplied.12.044049

2019-10-04

Abstract:Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two ferromagnets but also by the electric polarization of the ferroelectric interlayer, providing great opportunities for next-generation multi-state memory devices. Here we show that a La0.67Sr0.33MnO3 (LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevel resistance states in the presence of gradually reversed ferroelectric domains via tunneling electro-resistance and tunneling magnetoresistance, respectively. The nonvolatile ferroelectric control in the MFTJ can be attributed to separate contributions arising from two independent ferroelectric channels in the PZT interlayer with opposite polarization. Our study shows the dominant role of "mixed" ferroelectric states on achieving accumulative electrical modulation of multilevel resistance states in MFTJs, paving the way for multifunctional device applications.

Materials Science
In-situ TEM Observation of Multilevel Storage Behavior in Low Power FeRAM Device

Chung-Hua Chiu,Chun-Wei Huang,Ying-Hui Hsieh,Jui-Yuan Chen,Chia-Fu Chang,Ying-Hao Chu,Wen-Wei Wu

DOI: https://doi.org/10.1016/j.nanoen.2017.02.008

IF: 17.6

2017-01-01

Nano Energy

Abstract:The quest for non-volatile memories has attracted tremendous attention, especially in mature ferroelectric random access memory (FeRAM) with properties of high read/write speed and low power consumption. Strain engineering of multiferroic BiFeO3 (BFO) has recently become the subject of broad research interest because of its intriguing properties. In this study, we demonstrate the switchable diode characteristics in highly strained BFO thin films. Using a unique in situ electrical transmission electron microscopy (TEM), we verify the correlation between ferroelectric resistive switching with multilevel states and polarization reversal. Structural investigation confirms that the phase transition from mixed phase to pure T-like phase, accompanying with the polarization reversal by external bias, is the origin of the multilevel states. The switchable diode with multilevel resistive switching can be explained in terms of the variation of the barrier height, governed by ferroelectric polarization and polarity of the external bias. This research model, i.e., engineering of the room inside, can offer an approach toward high-density memories.
Strain-mediated voltage-controlled magnetic double-vortex states in elliptical nanostructures

Xiao Song,Ji-Pei Chen,Zhi-Peng Hou,Ming-Hui Qin,Xing-Sen Gao,Jun-Ming Liu

DOI: https://doi.org/10.1016/j.jmmm.2021.168729

IF: 3.097

2022-04-01

Journal of Magnetism and Magnetic Materials

Abstract:The magnetic vortices are promising candidates as information carriers for future energy efficient spintronic devices (e.g. memory), and the key challenge is to achieve reversible voltage driven magnetic switching of vortex state at nanometer scale. In this work, we demonstrated the strain-mediated voltage-controlled reversible switching between double-vortex domain and single domain in a nanoscale multiferroic heterostructure, consisting of a Co ellipse nanomagnet on a PbMg1/3Nb2/3O3-PbTiO3 piezoelectric substrate, by means of micromagnetic simulation. In this scheme, the double-vortex state can be deterministically written and erased triggered by applying electric voltage mediated by coupling strain. Besides, the critical strains for triggering the magnetic switching were also explored, which are strongly depended on geometric shape (i.e., aspect ratio) of the ellipse. These findings suggest the possibility of voltage-driven creation/erasure and switching of double-vortex states in elliptical nanomagnets, which provide a new pathway for development of energy efficient magnetoelectric memory and logic devices based on nanoscale multiferroic heterostructures.

materials science, multidisciplinary,physics, condensed matter
Electric Field Control of Nonvolatile Two‐state Magnetoelectric Coefficient at Room Temperature in a Hexaferrite

Kun Zhai,Peipei Lu,Yanfen Chang,Anmin Nie,Zhipeng Yu,Young Sun

DOI: https://doi.org/10.1111/jace.17105

IF: 4.186

2020-01-01

Journal of the American Ceramic Society

Abstract:Cross coupling between magnetization and polarization in multiferroic materials provides a new controlling dimension for creating novel electric devices, particularly the electrical writing magnetic reading of low-power consumption nonvolatile random access memory. Despite its importance, rare single-phase materials that exhibit significant magnetoelectric phenomena at room temperature exist. We herein report that a spin-driven multiferroic hexaferrite Ba(1.1)Sr(0.9)Co(2)Fe(11)AlO(22)exhibits a prominent direct and converse magnetoelectric effect at room temperature. The electric field can manipulate magnetization as large as 0.1 mu(B)/f.u. in the range of +/- 1 MV/m without any external magnetic field. Moreover, a feasible nonvolatile memory based on polycrystalline Ba(1.1)Sr(0.9)Co(2)Fe(11)AlO(22)is realized by recording the states of magnetoelectric coefficients, which is promising for further application in magnetoelectric electronics.
Nonvolatile Transtance Change Random Access Memory Based on Magnetoelectric P(Vdf-Trfe)/Metglas Heterostructures

Peipei Lu,Dashan Shang,Jianxin Shen,Yisheng Chai,Chuansen Yang,Kun Zhai,Junzhuang Cong,Shipeng Shen,Young Sun

DOI: https://doi.org/10.1063/1.4972304

IF: 4

2016-01-01

Applied Physics Letters

Abstract:Transtance change random access memory (TCRAM) is a type of nonvolatile memory based on the nonlinear magnetoelectric coupling effects of multiferroics. In this work, ferroelectric P(VDF-TrFE) thin films were prepared on Metglas foil substrates by the sol-gel technique to form multiferroic heterostructures. The magnetoelectric voltage coefficient of the heterostructure can be switched reproducibly to different levels between positive and negative values by applying selective electric-field pulses. Compared with bulk multiferroic heterostructures, the polarization switching voltage was reduced to 7 V. Our facile technological approach enables this organic magnetoelectric heterostructure as a promising candidate for the applications in multilevel TCRAM devices.
Single Ferromagnetic Layer Magnetic Random Access Memory

m j xing,m b a jalil,s g tan,yong jiang

DOI: https://doi.org/10.1063/1.4819215

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:We propose a magnetic random access memory (MRAM) device in which both the writing and reading processes are realized within a single ferromagnetic (FM) layer. The FM layer is sandwiched between layers of heavy element and oxide to enhance the Rashba spin-orbit coupling (RSOC). When the in-plane FM moments are oriented at some intermediate angle to the current direction, the RSOC effect induces a spin accumulation in the FM layer, which in turn generates a Rashba spin torque field via the s-d exchange interaction. This field acts as the writing field of the memory device. The RSOC also induces a charge accumulation in the transverse direction via the inverse spin Hall effect (ISHE), which can be used to realize the memory read-out. The writing and read-out processes of the proposed memory are modeled numerically via the non-equilibrium Green's function technique. Besides the advantages of Rashba spin torque writing, i.e., no spin injection and symmetrical data-writing process, this single FM layer MRAM design does away with having a giant magnetoresistive or magnetic tunnel junction multilayer structure by utilizing the ISHE for the read-out process. (C) 2013 AIP Publishing LLC.
Multilevel Resistance Switching Memory in La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) Heterostructure by Combined Straintronics-Spintronics

Weiping Zhou,Yan Xiong,Zhengming Zhang,Dunhui Wang,Weishi Tan,Qingqi Cao,Zhenghong Qian,Youwei Du

DOI: https://doi.org/10.1021/acsami.5b11392

IF: 9.5

2016-01-01

ACS Applied Materials & Interfaces

Abstract:We demonstrate a memory device with multifield switchable multilevel states at room temperature based on the integration of straintronics and spintronics in a La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) (011) heterostructure. By precisely controlling the electric field applied on the PMN-PT substrate, multiple nonvolatile resistance states can be generated in La2/3Ba1/3MnO3 films, which can be ascribed to the strain-modulated metal-insulator transition and phase separation of Manganite. Furthermore, because of the strong coupling between spin and charge degrees of freedom, the resistance of the La2/3Ba1/3MnO3 film can be readily modulated by magnetic field over a broad temperature range. Therefore, by combining electroresistance and magnetoresistance effects, multilevel resistance states with excellent retention and endurance properties can be achieved at room temperature with the coactions of electric and magnetic fields. The incorporation of ferroelastic strain and magnetic and resistive properties in memory cells suggests a promising approach for multistate, high-density, and low-power consumption electronic memory devices.
Room-Temperature Nonvolatile Memory Based on a Single-Phase Multiferroic Hexaferrite

Kun Zhai,Dashan Shang,Yisheng Chai,Gang Li,Jianwang Cai,Bao-gen Shen,Young Sun

DOI: https://doi.org/10.1002/adfm.201705771

IF: 19

2018-01-01

Advanced Functional Materials

Abstract:The cross-coupling between electric polarization and magnetization in multiferroic materials provides a great potential for creating next-generation memory devices. Current studies on magnetoelectric (ME) applications mainly focus on ferromagnetic/ferroelectric heterostructures because single-phase multiferroics with strong magnetoelectric coupling at room temperature are still very rare. Here a type of nonvolatile memory device is presented solely based on a single-phase multiferroic hexaferrite Sr3Co2Fe24O41 which exhibits nonlinear magnetoelectric effects at room temperature. The principle is to store binary information by employing the states (magnitude and sign) of the first-order and the second-order magnetoelectric coefficients (alpha and beta), instead of using magnetization, electric polarization, and resistance. The experiments demonstrate repeatable nonvolatile switch of alpha and beta by applying pulsed electric fields at room temperature, respectively. Such kind of memory device using single-phase multiferroics paves a pathway toward practical applications of spin-driven multiferroics.
Toward Multiferroic Memories

Zhongqiang Hu,Qu Yang,Xinger Zhao,Gail J. Brown

DOI: https://doi.org/10.1002/9783527803675.ch6

2019-01-01

Abstract:This chapter provides a brief summary of the magnetic properties that can be manipulated by a voltage, reviews recent progress in novel memory prototypes based on multiferroic materials, and discusses the future directions for multiferroic memories. Recently, voltage-controlled magnetic random access memories devices, namely, the magnetoelectric random access memory, have been proposed and demonstrated in principle by preliminary experiments, which normally combine the layered magnetoresistive (MR) element with a multiferroic or piezoelectric/ferroelectric layer based on anisotropic MR (AMR), giant magnetoresistance (GMR), or tunneling magnetoresistance (TMR) effects. By integrating multiferroics into these devices, magnetoresistance can be manipulated by a voltage rather than by an electromagnet. This technology leads to a large change in AMR, GMR, or TMR with great energy efficiency and makes novel low-power memory devices achievable. The chapter discusses more progress on voltage control of AMR, GMR, and TMR.
Mesoscopic superconducting memory based on bistable magnetic textures

R. Fermin,N. M. A. Scheinowitz,J. Aarts,K. Lahabi

DOI: https://doi.org/10.1103/PhysRevResearch.4.033136

2022-08-20

Physical Review Research

Abstract:With the ever-increasing energy need to process big data, the realization of low-power computing technologies, such as superconducting logic and memories, has become a pressing issue. Developing fast and nonvolatile superconducting memory elements, however, remains a challenge. Superconductor-ferromagnet hybrid devices offer a promising solution, as they combine ultrafast manipulation of spins with dissipationless readout. Here, we present a type of nonvolatile Josephson junction memory that utilizes the bistable magnetic texture of a single mesoscopic ferromagnet. We use micromagnetic simulations to design an ellipse-shaped planar junction structured from a Co/Nb bilayer. The ellipse can be prepared as uniformly magnetized or as a pair of vortices at zero applied field. The two states yield considerably different critical currents, enabling reliable electrical readout of the element. We describe the mechanism that controls the critical current by applying numerical calculations to quantify the local stray field from the ferromagnet, which shifts the superconducting interference pattern. Our approach presents a route towards realizing superconducting memory applications by combining micromagnetic modeling with bistable spin-textured junctions. https://doi.org/10.1103/PhysRevResearch.4.033136 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Published by the American Physical Society

Strain-Mediated Multilevel Ferroelectric Random Access Memory Operating Through A Magnetic Field

Electric-Field Control Of Strain-Mediated Magnetoelectric Random Access Memory

Multilevel hysteresis loop engineered with ferroelectric nano-metamaterials

Phase-field simulations of easily switchable vortex structure for multilevel low-power ferroelectric memory

A Simple Bilayered Magnetoelectric Random Access Memory Cell Based on Electric-Field Controllable Domain Structure

A multilevel nonvolatile magnetoelectric memory based on memtranstor

Phase Field Simulation of Magnetization Vortex in Ferromagnetic Nanomaterials

Design of a Voltage‐Controlled Magnetic Random Access Memory Based on Anisotropic Magnetoresistance in a Single Magnetic Layer

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

Voltage Pulse Controlling Multilevel Data Ferroelectric Storage Memory with a Nonepitaxial Ultrathin Film

Non-volatility Using Materials with Only Volatile Properties: Vertically Integrated Magnetoelectric Heterostructures and Their Potential for Multi-Level-cell Devices

Nonvolatile Multilevel States in Multiferroic Tunnel Junctions

In-situ TEM Observation of Multilevel Storage Behavior in Low Power FeRAM Device

Strain-mediated voltage-controlled magnetic double-vortex states in elliptical nanostructures

Electric Field Control of Nonvolatile Two‐state Magnetoelectric Coefficient at Room Temperature in a Hexaferrite

Nonvolatile Transtance Change Random Access Memory Based on Magnetoelectric P(Vdf-Trfe)/Metglas Heterostructures

Single Ferromagnetic Layer Magnetic Random Access Memory

Multilevel Resistance Switching Memory in La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) Heterostructure by Combined Straintronics-Spintronics

Room-Temperature Nonvolatile Memory Based on a Single-Phase Multiferroic Hexaferrite

Toward Multiferroic Memories

Mesoscopic superconducting memory based on bistable magnetic textures