Abstract:The demand for low-dissipation nanoscale memory devices is as strong as ever. As Moore's Law is staggering, and the demand for a low-power-consuming supercomputer is high, the goal of making information processing circuits out of superconductors is one of the central goals of modern technology and physics. So far, digital superconducting circuits could not demonstrate their immense potential. One important reason for this is that a dense superconducting memory technology is not yet available. Miniaturization of traditional superconducting quantum interference devices is difficult below a few micrometers because their operation relies on the geometric inductance of the superconducting loop. Magnetic memories do allow nanometer-scale miniaturization, but they are not purely superconducting (Baek et al 2014 Nat. Commun. 5 3888). Our approach is to make nanometer scale memory cells based on the kinetic inductance (and not geometric inductance) of superconducting nanowire loops, which have already shown many fascinating properties (Aprili 2006 Nat. Nanotechnol. 1 15; Hopkins et al 2005 Science 308 1762). This allows much smaller devices and naturally eliminates magnetic-field cross-talk. We demonstrate that the vorticity, i.e., the winding number of the order parameter, of a closed superconducting loop can be used for realizing a nanoscale nonvolatile memory device. We demonstrate how to alter the vorticity in a controlled fashion by applying calibrated current pulses. A reliable read-out of the memory is also demonstrated. We present arguments that such memory can be developed to operate without energy dissipation.

Mesoscopic superconducting memory based on bistable magnetic textures

Superconductor bistable vortex memory for data storage and readout

An invisible non-volatile solid-state memory

Hybrid superconducting-magnetic memory device using competing order parameters

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Current Assisted Memory Effect in Superconductor–ferromagnet Bilayers: a Potential Candidate for Memristors

Nanoscale superconducting memory based on the kinetic inductance of asymmetric nanowire loops

Nonvolatile Memory Cell Using a Superconducting-Ferromagnetic Π Josephson Junction

Design of Single‐Molecule Multiferroics for Efficient Ultrahigh‐Density Nonvolatile Memories

Ultralow Voltage Manipulation of Ferromagnetism

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

Superconductor bistable vortex memory for data storage and in-memory computing

Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory

Nonvolatile Memory Based on Nonlinear Magnetoelectric Effects

Multivalued Memory via Freezing of Super-Hard Magnetic Domains in a Quasi 2D-Magnet

Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization

Electrically-controlled hybrid superconductor-ferromagnet cell for high density cryogenic memory

Designing Current-Strain-assisted Superconductor-Ferromagnet Multi-Bit Memories

Electrically Driven Reversible Magnetic Rotation in Nanoscale Multiferroic Heterostructures.

Room-Temperature Nonvolatile Memory Based on a Single-Phase Multiferroic Hexaferrite