Nonvolatile Memory Cell Using a Superconducting-Ferromagnetic Π Josephson Junction

Zhen Wang
DOI: https://doi.org/10.1088/1361-6668/ac80d9
2022-01-01
Superconductor Science and Technology
Abstract:Storage of a single magnetic flux quantum in a superconducting loop containing a Josephson junction represents a promising unit cell configuration for construction of a cryogenic memory of superconducting digital circuits. However, application of a DC bias current is required for operation of such a memory cell to maintain trapping of the flux quantum in the storage loop. In this work, we present a superconducting memory cell that uses a superconducting-magnetic pi junction. The cell characteristics show flux quantum hysteresis centering at the zero-bias current. We develop a fabrication process that combines superconductor-ferromagnet-superconductor (SFS) junctions with superconductor-normal metal-superconductor (SNS) junctions. The critical current density of the SFS junctions shows a 0-pi oscillation as a function of the ferromagnetic layer thickness. The formation of the pi junction is confirmed further by the flux modulation curves of a superconducting quantum interference device made from SNS junctions with an additional SFS junction.
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