A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)
r s beach,tai min,cheng t horng,qingmin chen,p sherman,shuyun le,shengjoue young,k yang,huan yu,xiaoduo lu,witold kula,tom zhong,rong xiao,adam zhong,gang liu,junsuo kan,jianmin yuan,j chen,rong tong,jentzung chien,terry torng,dahai tang,ping wang,min chen,solomon assefa,masood qazi,john k debrosse,michael c gaidis,s kanakasabapathy,yingdong lu,j nowak,e j m osullivan,thomas m maffitt,j z sun,w j gallagher
DOI: https://doi.org/10.1109/IEDM.2008.4796679
2008-01-01
Abstract:We have demonstrated a robust magnetic tunnel junction (MTJ) with a resistance-area product RA=8 Omega-mum2 that simultaneously satisfies the statistical requirements of high tunneling magnetoresistance TMR > 15sigma(Rp), write threshold spread sigma(Vw)/<Vw> <7.1%, breakdown-to-write voltage margin over 0.5 V, read-induced disturbance rate below 10-9, and sufficient write endurance, and is free of unwanted write-induced magnetic reversal. The statistics suggest that a 64 Mb chip at the 90-nm node is feasible.