Flexible MgO Barrier Magnetic Tunnel Junctions

Li Ming Loong,Wonho Lee,Xuepeng Qiu,Ping Yang,Hiroyo Kawai,Mark Saeys,Jong-Hyun Ahn,Hyunsoo Yang
DOI: https://doi.org/10.1002/adma.201600062
IF: 29.4
2016-04-27
Advanced Materials
Abstract:Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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