High-Q On-Chip Inductors Embedded in Wafer-Level Package for RFIC Applications

Tao Feng,Jian Cai,Kwon, H.H.K.,Qian Wang
DOI: https://doi.org/10.1109/icept.2008.4606957
2008-01-01
Abstract:Wafer level packaging (WLP) technology has been used to integrate high-Q inductor on Si substrate. These inductors consist of a thick Cu electroplated rerouting to reduce series resistance and a thick dielectric layer to separate the inductors from Si substrate. The measured results show that the peak O-factor is 30 at 4 GHz for a 0.77 nH inductor, which is good agreement with the simulated performance by HFSS. Therefore, this technology realizes embedded high-Q inductors in WLP and can improve the performance of RF system.
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