Abstract:In this paper, a high-resistivity silicon (HR-Si) interposer integrated with through-silicon via (TSV) electrically grounded coplanar waveguide (CPW) line is presented for 2.5-D/3-D heterogeneous integration of radio frequency (RF) microelectronics devices. In addition, design of TSV interconnection composed of two coaxial ladder-hollow-annular Cu (copper) TSVs of different diameters is utilized to maintain a sufficient freedom for strict standard cleaning to avoid Si resistivity degradation. The formation of the coaxial ladder TSV structure is more beneficial to the subsequent plating process because it reduces the aspect ratio of TSV vias. Hollow-annular Cu TSV is manufactured in order to reduce the problem of mismatch in coefficient of thermal expansion among TSV's constituent materials. A layer of Au (aurum) film is utilized to passivate the exposed Cu surface of Si interposer. Au is widely used in III-V groups' devices because of the good compatibility with photonic integrated circuits, conductivity, and corrosion resistance. HR-Si interposer with TSV grounded CPW line and test structure is fabricated and characterized. With the monitoring test results, it can be found that it changes little in the resistivity of Si substrate, though the whole process, which is a basic requirement for RF performance. RF property test results show that the insertion loss is about -0.20 dB/mm at 10 GHz for the presented TSV grounded CPW line and -0.02 dB per TSV. These test results are better than the traditional design. To verify its applicability to 2.5-D/3-D heterogeneous integration, RF microelectronics die is assembled on TSV interposer and tested, and the test results prove that it works properly.

Design, Fabrication and Characterization of a Novel TSV Interposer Integrated Inductor for RF Applications

On the Efficacy of Through-Silicon-Via Inductors

Through-silicon-via inductor: Is it real or just a fantasy?

System-level Design Consideration and Optimization of Through-Silicon-via Inductor.

TSV inductor optimization and its design implication

Experimental Characterisation Of On-Chip Octagonal Double-Helix Inductors On Silicon Substrates

Modelling On-Chip Circular Double-Spiral Stacked Inductors for RFICs

Novel Through-Silicon-Via Inductor-Based On-Chip DC-DC Converter Designs in 3D ICs

On-chip Vertical Tapered Solenoid Inductor with High Self-Resonance Frequency

Implementation of New CMOS Differential Stacked Spiral Inductor for VCO Design

The design and fabrication of LTCC chip inductors for high frequency applications based on barium ferrites

Process Development of Thick Si Interposer for 2.5d Integration of Rf Mems Devices

HR-Si TSV Integrated Inductor

Fabrication and RF Property Evaluation of High-Resistivity Si Interposer for 2.5-D/3-D Heterogeneous Integration of RF Devices

High-Q On-Chip Inductors Embedded in Wafer-Level Package for RFIC Applications

Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA

High-Q Integrated Inductor Using Post-Cmos Selectively Grown Porous Silicon (sgps) Technique for Rfic Applications

A Practical Suspended Spiral Inductor for MMIC Application

A 2.5D Integrated L Band Receiver Based on High Resistivity Si Interposer

Implementation and Characterization of a Tunable Quality Factor Micromachined Inductor

Simulation and Optimization of High Performance On-Chip Solenoid MEMS Inductor