Abstract:High-resistivity(HR) silicon-on-insulator (SOI) substrates provide low substrate loss, so planar spiral inductors integrated on them presenting higher quality factor ( $Q$ ) than those on traditional Si substrates. However, the parasitic surface conduction (PSC) effect in the SOI substrate constitutes a conductive layer underneath the buried oxide layer, which deteriorates the inductors performance. This effect can be effectively eliminated by introducing a trap-rich layer. In this paper, physical models that can accurately characterize the behavior of inductors integrated on the HR and radio frequency enhanced signal integrity (RFeSI) SOI substrates are presented, and the analysis and evaluation of PSC effect on the performance of inductors, i.e., the inductance, the quality factor, the self-resonant frequency, and the frequency, where $Q$ peaks, are shown. Planar spiral inductors integrated on HR and RFeSI SOI substrates are fabricated and measured, validating the feasibility of the models we use. The experiment results show that the value of $Q$ and the frequency where it peaks can be improved significantly by eliminating the PSC effect. The temperature effects are also explored, showing that the PSC effect gets worse with raising temperature and accelerates the degradation rate of $Q$ .

High-Q Integrated Inductor Using Post-Cmos Selectively Grown Porous Silicon (sgps) Technique for Rfic Applications

Asic Design of an Integrable Simulated Inductor with Huge Inductance

Modelling On-Chip Circular Double-Spiral Stacked Inductors for RFICs

A New System-on-a-chip (SOC) Technology High Q Post Passivation Inductors

Backside Growth Thick Porous Silicon Layers for High Q On-Chip Rf Integrated Inductors

A derived circuit model for spiral inductors on lossy silicon substrate

A 1.3–1.7-Ghz $Q$ -Enhanced Resonator-Based High-IF Bandpass Filter with 1.5%–67% Tunable Fractional Bandwidth in 65-Nm CMOS Process

The enhancement of Q factor for patterned ground shield inductors at high temperatures

High Q-factor CMOS-MEMS inductor

High-Q On-Chip Inductors Embedded in Wafer-Level Package for RFIC Applications

Design, Fabrication and Characterization of a Novel TSV Interposer Integrated Inductor for RF Applications

Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA

High-Q CMOS-compatible micromachined edge-suspended spiral inductors

Physical Models of Planar Spiral Inductor Integrated on the High-Resistivity and Trap-Rich Silicon-on-Insulator Substrates

The design and fabrication of LTCC chip inductors for high frequency applications based on barium ferrites

Fabrication and Performance of Novel RF Spiral Inductors on Silicon

Design and Simulation of Si-Based MEMS Inductor

High-Performance Edge-Suspended Spiral Inductors And Cpws On Cmos-Grade Silicon Substrates

On-chip soft-ferrite-integrated inductors for RF IC

Simulation and Optimization of High Performance On-Chip Solenoid MEMS Inductor

Design of a Novel High Q On-Chip Non-solenoid MEMS Inductor