Abstract:By employing a graded-interfaces model based on a generalized formalism for interface-roughness (IFR) scattering that was modified for mid-infrared emitting quantum cascade lasers (QCLs), we have accurately reproduced the electro-optical characteristics of published record-performance 4.9 μm- and 8.3 μm-emitting QCLs. The IFR-scattering parameters at various interfaces were obtained from measured values and trends found via atom-probe tomography analysis of one of our 4.6 μm-emitting QCL structures with variable barrier heights. Those values and trends, when used for designing a graded-interface, 4.6 μm-emitting QCL, led to experimental device characteristics in very good agreement with calculated ones. We find that the published record-high performance values are mainly due to both injection from a prior-stage low-energy (active-region) state directly into the upper-laser ( ul ) level, thus at low field-strength values, as well as to strong photon-induced carrier transport. However, the normalized leakage-current density J leak / J is found to be quite high: 26–28 % and 23.3 %, respectively, mainly because of IFR-triggered shunt-type leakage through high-energy active-region states, in the presence of high average electron temperatures in the ul laser level and an energy state adjacent to it: 1060 K and 466 K for 4.9 μm- and 8.3 μm-emitting QCLs, respectively. Then, modeling with graded interfaces becomes a tool for designing devices of performances superior to the best reported to date, thus closing in on fundamental limits. The model is employed to design a graded-interface 8.1 μm-emitting QCL with suppressed carrier leakage via conduction-band engineering, which reaches a maximum front-facet wall-plug efficiency value of 22.2 %, significantly higher than the current record (17 %); thus, a value close to the fundamental front-facet, upper limit (i.e., 25 %) for ∼8 μm-emitting QCLs.

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Stable Single-Mode Operation of Distributed Feedback Quantum Cascade Laser under High Current Via a Grating Reflector

Q-modulated Semiconductor Laser Using Deep Etched Subwavelength Trenches

GaAs/AlGaAs quantum cascade lasers

Single Mode Operation of Short-Cavity Quantum Cascade Lasers

Study of an Epitaxial Regrowth Process by MOCVD for Photonic-Crystal Surface-Emitting Lasers

Modeling with graded interfaces: Tool for understanding and designing record-high power and efficiency mid-infrared quantum cascade lasers

Extremely Low Threshold Current, Buried-Heterostructure Strained Ingaas Gaas Multiquantum Well Lasers

Room Temperature Operation of a Buried Heterostructure Photonic Crystal Quantum Cascade Laser

High-Power Mid-Infrared Quantum Cascade Laser with Large Emitter Width

Multidimensional Conduction-Band Engineering for Maximizing the Continuous-Wave (CW) Wallplug Efficiencies of Mid-Infrared Quantum Cascade Lasers

1.48 Mu M Ingaas/Ingaasp Separated Confinement Strained Layer Multiple Quantum Well Lasers

Improvement of mid-wave infrared quantum cascade laser epitaxy by studying the effect of thermal annealing on GaInAs/AlInAs superlattice

Dominant Influence of Interface Roughness Scattering on the Performance of GaN Terahertz Quantum Cascade Lasers.

MOCVD growth of AlGaInAs/AlGaAs SQW for high-power laser diodes studied by reflectance anisotropy spectroscopy

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Inas1-Ysby/Gaxin1-Xsb Broken-Gap Heterostructures For Quantum Cascade Lasers

Integrated Fabrication Of A High Strain Ingaas/Gaas Quantum Well Structure Under Variable Temperature And Improvement Of Properties Using Mocvd Technology

Threshold Reduction in Strained-Layer InGaAs/GaAs Quantum Well Lasers by Liquid Phase Epitaxy Regrowth