Abstract:Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration, which can provide considerable economical, energy-efficient and foundry-scalable on-chip light sources, that has not been reported yet. Here, we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on trenched silicon-on-insulator (SOI) substrate, enabling monolithic integration with butt-coupled silicon waveguides. By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via hybrid molecular beam epitaxy (MBE), high-performance embedded InAs QD lasers with monolithically out-coupled silicon waveguide are achieved on such template. By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture, embedded III-V lasers on SOI with continuous-wave lasing up to 85 °C are obtained. The maximum output power of 6.8 mW can be measured from the end tip of the butt-coupled silicon waveguides, with estimated coupling efficiency of approximately -6.7 dB. The results presented here provide a scalable and low-cost epitaxial method for the realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration.

Fabrication of monolithic integration of 1.55 μm QW laser and HBT

Fabrication of monolithic integration of 1.55 /spl mu/m QW laser and HBT

Monolithic Integration of a Lithium Niobate Microresonator with a Free-Standing Waveguide Using Femtosecond Laser Assisted Ion Beam Writing.

Monolithic Integration of a High-Quality Factor Lithium Niobate Microresonator with a Free-Standing Membrane Waveguide Using Femtosecond Laser Assisted Ion Beam Writing (FLAIBW)

Monolithic Integration of Tunable V-coupled-cavity Laser and Mach-Zehnder Modulator on Generic InP Platform

Monolithic integration of embedded III-V lasers on SOI

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Photonic integrated circuits fabricated using quantum well intermixing

Photonic-integrated circuits and components using quantum well intermixing

Polarization Insensitive InGaAs/InGaAsP/InP Amplifiers Using Quantum Well Intermixing

High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELs by Direct Wafer-Bonding

Fabrication of Buried Tunnel Junction and Its Application in 1.3 Μm VCSEL Structure

Monolithic Fabrication of Ingaas/Gaas/Algaas Multiple Wavelength Quantum Well Laser Diodes Via Impurity-Free Vacancy Disordering Quantum Well Intermixing

Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation

Design and fabrication of a monolithic optoelectronic integrated circuit chip based on CMOS compatible technology

Design and Improvement of InP-based Traveling Wave Mach-Zehnder Modulator for Monolithic Integrated with V-cavity Laser

A 1.55-Μm Laser Array Monolithically Integrated with an MMI Combiner

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

Monolithically integrated device composed of MQW GaAlAs/GaAs gain-coupled DFB laser and electroabsorption modulator