LIFETIME PREDICTION OF TFT INTEGRATED GATE DRIVERS

Li Wenjie,Liao Congwei,Xiao Xiang,Hu Zhijin,Li Junmei,Zhang Shengdong
DOI: https://doi.org/10.1109/icsict.2014.7021450
2014-01-01
Abstract:In this paper, we propose a method to predict the lifetime of TFT integrated gate driver circuits. Firstly, the failure analysis of the TFT circuit is performed and the maximum tolerable threshold voltage shift value (Delta V-TMAX) for the low-level-holding TFTs in the integrated circuit is determined by simulations with SMARAT-SPICE. Then the dependences of threshold voltage shift (Delta V-T) of TFTs on the gate bias stress are measured and the Delta V-T model parameters are extracted with the measured data using linear extrapolation. Results show the proposed approach is able to fast and accurately predict the lifetime of the TFT integrated gate drivers.
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