Resolving Issues of VTH and ILeak for P-Type LTPS TFT-Based Emission Gate Driver by Reducing Falling Time and Increasing Stabilizing Period for Smartwatch Displays

Chih-Lung Lin,Yi-Chien Chen,Po-Cheng Lai,Jui-Hung Chang,Ting-En Wei,Cheng-Yi Huang

DOI: https://doi.org/10.1109/led.2023.3346393

IF: 4.8157

2024-03-02

IEEE Electron Device Letters

Abstract:This work proposes an emission (EM) gate driver that is based on p-type low-temperature poly-crystalline silicon thin-film transistors (LTPS TFTs) with the implementation of lightly doped drain (LDD) to achieve flat off current. The long-tail phenomenon associated with the EM signal that is caused by a high threshold voltage (VTH) and (VTH variation in LTPS TFTs is improved by enhancing the driving capability of the pull-down TFT. The pulse width of the EM signal is adjustable, and the gate driver has a stabilizing structure to reduce the voltage deviation caused by the high leakage current ( of LTPS TFTs; it keeps the EM signal at its lowest voltage level for 96.7% of the duration of a frame. Measurements indicate that the proposed structure shortens the falling time of the EM signal to , which is much shorter than a horizontal time of , yielding an EM signal with low distortion. An accelerated lifetime test demonstrates the high reliability of the proposed gate driver, which has the potential for driving active-matrix organic light-emitting diodes (AMOLEDs) smartwatch displays.

engineering, electrical & electronic