Abstract:The small gate overvoltage margin is a key reliability concern of the GaN Schottky-type p-gate high electron mobility transistor (GaN SP-HEMT). Current evaluation of gate reliability in GaN SP-HEMTs relies on either the DC bias stress or pulse I-V method, neither of which resembles the gate voltage (VGS) overshoot waveform in practical converters. This work develops a new circuit method to characterize the gate robustness and reliability in GaN SP-HEMTs, which features a resonance-like VGS ringing with pulse width down to 20 ns and an inductive switching concurrently in the drain-source loop. Using this method, the gate's single-pulse failure boundary, i.e., dynamic gate breakdown voltage (BVDYN), is first obtained under the hard switching (HSW) and drain-source grounded (DSG) conditions. The gate's switching lifetime is then tested under the repetitive VGS ringing, and the number of switching cycles to failure (SCTF#) is fitted by Weibull or Lognormal distributions. The SCTF# shows a power law relation with the VGS peak value and little dependence on the switching frequency. More interestingly, the gate's BVDYN and lifetime are both higher in HSW than those in DSG, as well as at higher temperatures. Such findings, as well as the gate degradation behaviors in a prolonged overvoltage stress test, can be explained by the time-dependent Schottky breakdown mechanism. The gate leakage current is found to be the major precursor of gate degradation. At 125 oC and 100 kHz, the VGS limits for a 10-year lifetime are projected to be ∼6 V and ∼10 V under the DSG and HSW conditions, respectively. These results provide a new qualification method and reveal new physical insights for gate reliability and robustness in p-gate GaN HEMTs

Research on the Reliability Theory and Lifetime Prediction Model of IGCT Gate Driver

Experimental Investigation on the Turn-Off Failure Mechanism of IGCT

Research on Series and Parallel Characteristics of Intergrated Gate Commutated Thyristors

Electro-Thermo-Mechanical Analysis and Modeling of High-Power Intergrated Gate Commutated Thyristors

Modern insulated gate bipolar transistor (IGBT) gate driving methods for robustness and reliability

Thermal Design via Improved Force-Directed Algorithm for IGCT Driver Board

Electro-thermo-mechanical analysis and modelling of high-power Intergrated Gate Commutated Thyristors

A Novel Detachable Gate Driver Unit with Ultralow Inductance for Integrated Gate Commutated Thyristor

Stray Impedance Measurement and Improvement of High-Power IGCT Gate Driver Units

LIFETIME PREDICTION OF TFT INTEGRATED GATE DRIVERS

Physics-based Compact Model of Integrated Gate-Commutated Thyristor with Multiple Effects for High-Power Application

Full-Time Junction Temperature Extraction of IGCT Based on Electrothermal Model and TSEP Method for High-Power Applications

Modern IGBT Gate Driving Methods for Enhancing Reliability of High-Power Converters - an Overview.

Lifetime estimation of IGBT module using square-wave loss discretization and power cycling test

A Lifetime Prediction Method for IGBT Modules Considering the Self-Accelerating Effect of Bond Wire Damage

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method

Lifetime Prediction of A Linear Transformer Driver Based on the Storage Capacitor Voltage Reversal Longevity

Analysis on the Commutation Loop Inductance of Different Cathode Regions in GCT Wafer

Reliability and Lifetime Analysis Considering IGBT Thermal Resistance Performance Degradation based on Hydropower Mission Profile of MMC

An IGCT Unified Simulation Model Based on the Electrical Model and Thermistor

Optimizing Insulated-Gate Bipolar Transistors' Lifetime Estimation: A Critical Evaluation of Lifetime Model Adjustments Based on Power Cycling Tests