Analysis on the Commutation Loop Inductance of Different Cathode Regions in GCT Wafer

Jiapeng Liu,Wenpeng Zhou,Chaoqun Xu,Gang Lyu,Rong Zeng
DOI: https://doi.org/10.1109/ecce.2018.8557713
2018-01-01
Abstract:With the advantages of low conducting loss, high reliability and low cost, Integrated Gate Commutated Thyristor (IGCT) is expanding its applications in high voltage and high current rating scenarios. In high power conditions, one of the main failure mechanisms restricting safe operating area for IGCT is the dynamic avalanche during switching off, which is notably amplified by the unbalanced parasitic parameters of different commutation loops. In this paper, the package model of IGCT is established, and the commutation loop inductance of different cathode regions is carefully calculated and analyzed. The result shows good precision by comparison with the experimental result.
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