Fabrication of P-Type Copper Oxide Thin-Film Transisters at Different Oxygen Partial Pressure

Zheyuan Chen,Xiang Xiao,Yang Shao,Weizhi Meng,Shuguang Zhang,Lunlun Yue,Lei Xie,Peng Zhang,Huiling Lu,Shengdong Zhang
DOI: https://doi.org/10.1109/icsict.2014.7021451
2014-01-01
Abstract:P-type copper-based oxide thin films are fabricated by DC reactive sputtering of copper at room temperature (RT) and studied as a function of oxygen partial pressure (O-PP). Cu2O crystalline phase is observed at 10% O-PP and it changes to CuO when O-PP increases to 15%. The crystallinity of the deposited films decreases sharply when O-PP increases to 20%. The p-type conductivity of the deposited films is identified by Hall measurements. Both the as-deposited and post-annealed bottom gate TFTs using CuO as active layers show significant field effect. The post-annealed CuO TFT with 30% O-PP has the p-type characteristics with mu(FE) approximate to 5 x 10(-3) cm(-2)/V.s, and an on/off ratio around 10(2).
What problem does this paper attempt to address?