High performance of graphene oxide-doped silicon oxide-based resistance random access memory
Rui Zhang,Kuan-Chang Chang,Ting-Chang Chang,Tsung-Ming Tsai,Kai-Huang Chen,Jen-Chung Lou,Jung-Hui Chen,Tai-Fa Young,Chih-Cheng Shih,Ya-Liang Yang,Yin-Chih Pan,Tian-Jian Chu,Syuan-Yong Huang,Chih-Hung Pan,Yu-Ting Su,Yong-En Syu,Simon M Sze
DOI: https://doi.org/10.1186/1556-276X-8-497
2013-01-01
Nanoscale Research Letters
Abstract:In this letter, a double active layer (Zr:SiO x /C:SiO x ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO x layer. Compared with single Zr:SiO x layer structure, Zr:SiO x /C:SiO x structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process.