Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Uniform Self-Rectifying Resistive Random-Access Memory Based on an MXene-TiO2 Schottky Junction

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

A Resistive Device with Electrolyte As Active Electrode

Investigation of Resistive Switching Mechanisms in Ti/TiO<i><sub>x</sub></i>/Pd-Based RRAM Devices

Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array.

A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

Multilevel Resistive Switching With Ionic And Metallic Filaments

Self- Compliance Unipolar Resistive Switching and Mechanism of Cu/SiO2/TiN RRAM Devices

Enhancing the Uniformity of a Memristor Using a Bilayer Dielectric Structure

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

90% Yield Production of Spiropyran Covalently Grafted MXene‐Based RRAM Devices for Optoelectronic Dual‐Response Switching

Effect of Film Density on MgSiO3-Based Resistive Random-Access Memory

Unipolar Resistive Switching with Forming-Free and Self-Rectifying Effects in Cu/HfO2/n-Si Devices

Novel 2D Materials-based Resistive Devices

High-performance Ta2O5-based Resistive Random-Access Memory with Embedded Graphene Quantum Dots and Pt-Ag Composite Active Layer

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Improved Resistive Switching Uniformity of SiO2 Electrolyte-Based Resistive Random Access Memory Device with Cu Oxidizable Electrode

Resistive switching mechanism of Cu doped ZrO2-based RRAM

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching