Abstract:Surge-energy robustness is essential for power devices in many applications such as automotive powertrains and electricity grids. While Si and SiC mosfets can dissipate surge energy via avalanche, the GaN high-electron-mobility transistor (HEMT) has no avalanche capability and withstands surge energy by its overvoltage capability. However, a comprehensive study into the surge-energy robustness of the cascode GaN HEMT, a composite device made of a GaN HEMT and an Si mosfet, is still lacking. This article fills this gap by investigating the failure and degradation of 650-V-rated cascode GaN HEMTs in single-event and repetitive unclamped inductive switching (UIS) tests. The cascode was found to withstand surge energy by the overvoltage capability of the GaN HEMT, accompanied by avalanche in the Si mosfet. In single-event UIS tests, the cascode failed in the GaN HEMT at a peak overvoltage of 1.41.7 kV, which is statistically lower than the device's static breakdown voltage (1.82.2 kV). In repetitive UIS tests, the device failure boundary was found to be frequency dependent. At 100kHz, the failure boundary (1.3 kV) is even lower than the single-event UIS boundary. After 1 million cycles of 1.25-kV UIS stresses, devices show large but recoverable parametric shifts. All these failure and degradation behaviors can be explained by the buffer trapping in the GaN HEMT and the resulted change in its dynamic breakdown voltage. Moreover, the GaN buffer trapping is believed to be assisted by the Si mosfet avalanche. An analytical model was also developed to extract the charges and losses produced in the Si avalanche in a UIS cycle. These results provide new insights into the surge-energy and overvoltage robustness of cascode GaN HEMTs.

Experimental study of 650V AlGaN/GaN HEMT short-circuit safe operating area (SCSOA)

Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure

Distinct Short Circuit Capability of 650-V <i>p</i>-GaN Gate HEMTs under Single and Repetitive Tests

650-V E-mode p-GaN Gate HEMT with Schottky Source Extension towards Enhanced Short-Circuit Reliability

1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability

Failure Analysis of 200V P-Gan HEMT under Unclamped Inductive Switching Conditions

Study of the Leakage Current Suppression for Hybrid-Schottky/ohmic Drain AlGaN/GaN HEMT

Experimental Investigations on Short-Circuit Capability of a New Structure Planar SiC MOSFETs

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Design and Development of P-Gan Gate HEMT with Schottky Source Extension for Improved Short-Circuit Reliability

Short Circuit Capability Characterization and Analysis of P-Gan Gate High-Electron-Mobility Transistors under Single and Repetitive Tests

Robustness of Cascode GaN HEMTs in Unclamped Inductive Switching

Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions

Comparative Evaluation of Short Circuit Robustness Across Generation of 1.2kv SiC MOSFETs

Comparative Evaluation of the Short Circuit Capability of SiC Planar and Trench Power MOSFET

Test Methodology for Short-Circuit Assessment and Safe Operation Identification for Power SiC MOSFETs

High Performance AlGaN/GaN Power Switch with Si3N4insulation

Dual-metal-gate AlGaN/GaN HEMTs for Power Application

A New Simple and Low Cost Short Circuit Protection Method for P-Gan HEMT

Methodology for Enhanced Short-Circuit Capability of SiC MOSFETs

An In-Depth Investigation into Short-Circuit Failure Mechanisms of State-of-the-Art 1200 V Double Trench SiC MOSFETs