A Study on the Timing Sensitivity of the Transient Dose Rate Effect on Complementary Metal-Oxide-Semiconductor Image Sensor Readout Circuits
Yanjun Fu,Zhigang Peng,Zhiyong Dong,Pei Li,Yuan Wei,Dongya Zhang,Yinghong Zuo,Jinhui Zhu,Shengli Niu
DOI: https://doi.org/10.3390/s24237659
IF: 3.9
2024-12-01
Sensors
Abstract:Complementary Metal-Oxide-Semiconductor (CMOS) image sensors (CISs), known for their high integration, low cost, and superior performance, have found widespread applications in satellite and space exploration. However, the readout circuits of pixel arrays are vulnerable to functional failures in complex or intense radiation environments, particularly due to transient γ radiation. Using Technology Computer-Aided Design (TCAD) device simulations and Simulation Program with Integrated Circuit Emphasis (SPICE) circuit simulations, combined with a double-exponential current source fault injection method, this study investigates the transient dose rate effect (TDRE) on a typical readout circuit of CISs. It presents the variations in the photoelectric signal under different dose rates and at different occurrence moments of the TDRE. The results show that, under low dose rates, the CIS readout circuit can still perform data acquisition and digital processing, with the photoelectric signal exhibiting some sensitivity to the occurrence moment. At high dose rates, however, the photoelectric signal not only remains sensitive to the occurrence moment but also shows significant discreteness. Further analysis of the CIS readout circuit sequence suggests that the occurrence moment is a critical factor affecting the circuit's performance and should not be overlooked. These findings provide valuable insights and references for further research on the TDRE in circuits.
engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation