Abstract:Complementary metal-oxide-semiconductor (CMOS) sensors are a competitive choice for future X-ray astronomy missions. Typically, CMOS sensors on space astronomical telescopes are exposed to a high dose of irradiation. We investigate the impact of irradiation on the performance of two scientific CMOS (sCMOS) sensors between -30 to 20 degree at high gain mode (7.5 times), including the bias map, readout noise, dark current, conversion gain, and energy resolution. The two sensors are irradiated with 50 MeV protons with a total dose of 5.3*10^10 p/cm^2. After the exposure, the bias map, readout noise and conversion gain at various temperatures are not significantly degraded, nor is the energy resolution at -30 degree. However, after the exposure the dark current has increased by hundreds of times, and for every 20 degree increase in temperature, the dark current also increases by an order of magnitude. Therefore, at room temperature, the fluctuations of the dark currents dominate the noise and lead to a serious degradation of the energy resolution. Moreover, among the 4k * 4k pixels, there are about 100 pixels whose bias at 50 ms has changed by more than 10 DN (~18 e-), and about 10 pixels whose readout noise has increased by over 15 e- at -30 degree. Fortunately, the influence of the dark current can be reduced by decreasing the integration time, and the degraded pixels can be masked by regular analysis of the dark images. Some future X-ray missions will likely operate at -30 degree, under which the dark current is too small to significantly affect the X-ray performance. Our investigations show the high tolerance of the sCMOS sensors for proton radiation and prove their suitability for X-ray astronomy applications.

What problem does this paper attempt to address?

### Problems Addressed by the Paper The paper primarily explores the performance changes of Complementary Metal-Oxide-Semiconductor (CMOS) sensors after proton irradiation, particularly in the context of X-ray astronomy. Specifically, the study focuses on the performance changes of two scientific CMOS (sCMOS) sensors in high-gain mode within the temperature range of -30°C to 20°C, including bias maps, readout noise, dark current, conversion gain, and energy resolution. #### Main Findings 1. **Bias Map**: There was no significant change in the bias map before and after irradiation at different temperatures. 2. **Readout Noise**: Readout noise slightly increased at all tested temperatures, but the change was not significant. 3. **Dark Current**: Dark current increased by several hundred times after irradiation and increased by an order of magnitude for every 20°C rise in temperature. At room temperature, fluctuations in dark current dominated the noise, leading to a severe decline in energy resolution. 4. **Conversion Gain**: Conversion gain did not change at -30°C and 20°C. 5. **Energy Resolution**: At low temperatures (-30°C), there was no significant change in energy resolution; however, at higher temperatures (e.g., 20°C), energy resolution significantly declined. 6. **Degraded Pixels**: At -30°C, although the overall sensor performance did not change significantly, a small number of new defective pixels were generated, with significantly degraded bias or readout noise. #### Conclusion The study indicates that sCMOS sensors have a high tolerance to proton radiation and are suitable for future X-ray astronomy missions. However, at room temperature, the increase in dark current can affect sensor performance, which can be mitigated by shortening the integration time. For missions like the EP satellite, operating at -30°C with an integration time of 50 milliseconds, the degraded dark current will hardly affect sensor performance. Additionally, a few degraded pixels can be masked out through regular dark frame analysis. These results suggest that large-format sCMOS sensors (such as EP4K) can maintain good performance after proton irradiation, making them suitable for future X-ray astronomy missions.

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