Abstract:In order to study the radiation damage mode and characterization of the camera system with CMOS active pixel sensor as the photosensitive element, this paper uses the method of on-line radiation experiment, combined with the radiation interference noise suppression algorithm, to study the change of color video image information with the total radiation dose, and discusses the radiation life of the hardware under the irradiation of different total radiation doses and the effect of gamma-ray radiation on the digital image information. Results show that the mode of gamma-ray radiation damage of the camera is mainly reflected in the light transmittance decrease caused by the radiation damage of the lens, the dark current increase, distortion and damage of the sensor, and the instantaneous damage of the main board. The total radiation dose effect of the sensor mainly results in the increase of background noise, and most of the noise signals arc concentrated in the dark part of frames. The increment of the average pixel value in the gray stripe of the image caused by the dark current is far less than the decrease of the average pixel value caused by the lens radiation damage. The exposure compensation function of the camera will carry out global compensation processing after detecting the decrease of video image brightness, which increases the pixel values of all pixels. The relationship between the video image information and total ionizing close can be used as a method to calibrate the failure probability of the CMOS active pixel sensor camera, which can improve the reliability of the application for this kind of video monitoring system in the radiation environment.

Mechanism Analysis and Experiment Simulation on Radiation Effects of CCDs

The Analysis of Mechanism on Ionization Radiation Damage Effects on CCD

Analysis of the Displacement Damage Mechanism of Radiation Effects in CCD

Study on Numerical Analysis and Experiment Simulation Approaches for Radiation Effects of Typical Optoelectronic Devices

Simulation on CTE Reduction of CCD Induced by Neutron Irradiation

The Analysis of CCD Sensitive Parameters Degraded by Radiation Damage

Analysis of Experiments on Total Dose Radiation Effects on TCD132D Linear CCD

Cobalt-60 Experiment on Ionization Radiation Effects of Charge Coupled Devices

Study on Γ-Ray Irradiation Damage Mode and Characterization of CMOS APS Camera

Different Dose Rate Radiation Effects on Linear CCDs

Synergistic Radiation Effects in PPD CMOS Image Sensors Induced by Neutron Displacement Damage and Gamma Ionization Damage

Experimental analysis of charge transfer efficiency degradation of charge coupled devices induced by proton irradiation

Theoretical and experimental study of the dark signal in CMOS image sensors affected by neutron radiation from a nuclear reactor

Modeling dark signal of CMOS image sensors irradiated by reactor neutron using Monte Carlo method

Numerical Simulation of Pulsed Laser Induced Damage on CCD Arrays

Experimental Study on Neutron-Induced Charge Transfer Degradation of Linear Charge Coupled Device

Progress of Radiation Damage Effects and Hardening Technology on CCD

Heavy Ion Irradiation Induced Single Particle Displacement Damage in 8T Global Shutter CMOS Image Sensor

Neutron radiation effects on linear CCDs at different clock pulse frequency

Radiation Effects Due to 3MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors

Degradation of a COTS Linear CCD Induced by Proton Irradiation