Abstract:This paper presents a radiation degradation study on 4-Transistor (4T) complementary metal-oxide-semiconductor (CMOS) image sensors designed in standard 0.18-μm technology. The significant contribution of this paper is a systematic evaluation of the X-ray radiation effects on image sensors from the individual device level, to the pixel level and to the level of the entire sensor. The major degradation parameters of the sensor have been analyzed. This paper also includes test structures of varying geometries of in-pixel MOSFETs, pinned photodiodes (PPD), and transfer gates (TG). Characterization was performed during different X-ray doses up to 109 krad. The major degradation-an increase in the dark signal-is analyzed by modifying the TG charge transfer time and integration time. The PPD and the TG are the elements most sensitive to the dark signal of the sensor. The radiation-related dimensional effects on the sensors are also evaluated, which show different results compared to 3T pixels. The transfer-gate length influences the dark signal due to not only the electric field variation in the TG channel but also the local defect generations. In-pixel MOSFETs are used to identify the origin of increases in radiation-induced dark signal. Shallow trench isolation (STI) oxides are responsible for the radiation degradation of the sensor. A slight degradation of the quantum efficiency was observed after radiation in the short-wavelength region. Basic hardening-by-design techniques are also presented. The discussion results of the radiation-related dimensional effects on the sensors together with the STI effect can be used as a guideline for future layout designs of radiation-tolerant sensors. Identifying the pixel dark current origin can help to determine where and how to suppress the pixel dark current generation more effectively.

The Analysis of CCD Sensitive Parameters Degraded by Radiation Damage

Analysis of the Displacement Damage Mechanism of Radiation Effects in CCD

Experimental analysis of charge transfer efficiency degradation of charge coupled devices induced by proton irradiation

The Analysis of Mechanism on Ionization Radiation Damage Effects on CCD

Progress of Radiation Damage Effects and Hardening Technology on CCD

Mechanism Analysis and Experiment Simulation on Radiation Effects of CCDs

Study on Γ-Ray Irradiation Damage Mode and Characterization of CMOS APS Camera

Degradation of a COTS Linear CCD Induced by Proton Irradiation

Study on Numerical Analysis and Experiment Simulation Approaches for Radiation Effects of Typical Optoelectronic Devices

Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors

Degradation Analysis of the Pinned Photodiode CMOS Image Sensors Induced by Energetic Proton Radiation

Heavy Ion Irradiation Induced Single Particle Displacement Damage in 8T Global Shutter CMOS Image Sensor

Electron Radiation Experiment of CMOS Image Sensor

Analysis of Experiments on Total Dose Radiation Effects on TCD132D Linear CCD

Simulation on CTE Reduction of CCD Induced by Neutron Irradiation

Research on proton displacement damage effects in charge-domain accumulation type TDI CMOS image sensors

Research on the degradation of resolution in cameras based on CMOS image sensor under γ- and X-rays irradiation

Radiation Effects Due to 3MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors

Different Dose Rate Radiation Effects on Linear CCDs

Impact of γ Irradiation Damage to CMOS Image Sensor on Camera Signal-To-Noise Ratio

Radiation Damage Induced by Various Particles on CC4013 Devices