Research on proton displacement damage effects in charge-domain accumulation type TDI CMOS image sensors
Yi Jiang,Lin Wen,Jie Feng,Zitao Zhao,Zhikang Yang,Changsong Shi,Rui Li,Yudong Li,Dong Zhou,Qi Guo
DOI: https://doi.org/10.1080/10420150.2024.2311826
2024-02-14
Radiation Effects and Defects in Solids
Abstract:TDI CMOS image sensors are the most widely used photodetectors in space earth observation and multispectral imaging. The displacement damage caused by high-energy proton irradiation in the space environment leads to the continuous degradation of TDI CMOS image sensor parameters, seriously affecting its performance, reliability, and service life. This paper focuses on a space-based TDI CMOS image sensor chip and carries out 3 MeV proton irradiation tests and post-irradiation annealing tests to obtain the change rules of optical and electrical parameters. The degradation mechanism of sensitive parameters of TDI CMOS image sensors caused by proton irradiation is analyzed, and the sensitive region of proton displacement damage are discussed. The study demonstrates that after proton irradiation, the parameters especially full well capacity and temporal dark noise of the device degrade less, with small sensitivity to proton irradiation. However, the dark current, CTE, and pixel column FPN significantly degrade, and the degree of degradation is linearly related to the proton irradiation dose. In addition, the test also obtained the short-term and long-term annealing changes of sensitive parameters after proton irradiation of TDI CMOS image sensors, providing scientific advice for TDI CMOS image sensors space proton radiation effect tests and evaluations. The research results of this paper provide important references for the evaluation of radiation effects, on-orbit performance estimation, and radiation resistance reinforcement of space-based TDI CMOS image sensors.
physics, condensed matter, fluids & plasmas,nuclear science & technology