Abstract:Complementary Metal-Oxide-Semiconductor (CMOS) image sensors (CISs), known for their high integration, low cost, and superior performance, have found widespread applications in satellite and space exploration. However, the readout circuits of pixel arrays are vulnerable to functional failures in complex or intense radiation environments, particularly due to transient γ radiation. Using Technology Computer-Aided Design (TCAD) device simulations and Simulation Program with Integrated Circuit Emphasis (SPICE) circuit simulations, combined with a double-exponential current source fault injection method, this study investigates the transient dose rate effect (TDRE) on a typical readout circuit of CISs. It presents the variations in the photoelectric signal under different dose rates and at different occurrence moments of the TDRE. The results show that, under low dose rates, the CIS readout circuit can still perform data acquisition and digital processing, with the photoelectric signal exhibiting some sensitivity to the occurrence moment. At high dose rates, however, the photoelectric signal not only remains sensitive to the occurrence moment but also shows significant discreteness. Further analysis of the CIS readout circuit sequence suggests that the occurrence moment is a critical factor affecting the circuit's performance and should not be overlooked. These findings provide valuable insights and references for further research on the TDRE in circuits.

Cobalt-60 Experiment on Ionization Radiation Effects of Charge Coupled Devices

Dose Rate Effects on Array CCDs Exposed by Co-60 Γ Rays Induce Saturation Output Degradation and Annealing Tests

Mechanism Analysis and Experiment Simulation on Radiation Effects of CCDs

Different Dose Rate Radiation Effects on Linear CCDs

Analysis of Experiments on Total Dose Radiation Effects on TCD132D Linear CCD

Total Dose Radiation Effects on COTS Array CCDs at Low Dose Rate

Total Ionizing Dose Effect on 12-bit LC2 MOS Digital-to-analog Converter

Radiation experiment of CMOS image sensor

Study on Numerical Analysis and Experiment Simulation Approaches for Radiation Effects of Typical Optoelectronic Devices

The Analysis of Mechanism on Ionization Radiation Damage Effects on CCD

Electron Radiation Experiment of CMOS Image Sensor

Degradation of CMOS APS Image Sensors Induced by Total Ionizing Dose Radiation at Different Dose Rates and Biased Conditions

Combined Reactor Neutron Beam and 60co Γ-Ray Radiation Effects on CMOS APS Image Sensors

Heavy Ion Irradiation Induced Single Particle Displacement Damage in 8T Global Shutter CMOS Image Sensor

Total Dose Effects with High Dose Rate in NMOS Transistors

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

Experimental analysis of charge transfer efficiency degradation of charge coupled devices induced by proton irradiation

Radiation Effects on Scientific CMOS Detectors for X-ray Astronomy: II. Total Ionizing Dose Irradiation

Synergistic Radiation Effects in PPD CMOS Image Sensors Induced by Neutron Displacement Damage and Gamma Ionization Damage

A Study on the Timing Sensitivity of the Transient Dose Rate Effect on Complementary Metal-Oxide-Semiconductor Image Sensor Readout Circuits