Abstract:CMOS image sensors (CISs) hardened by design against total ionizing dose (TID) are exposed to neutron fluences beyond 1014 n(1 MeV)/cm2. Neutron-irradiated devices show a huge increase in the dark current affecting uniformly the pixel array which leads to Gaussian shape dark current distributions. Moreover, random telegraph signal behavior is hardly detectable at these very high neutron fluences since the fluctuation amplitudes are hidden by the dark current shot noise. It is observed that neutrons induce a change in the depleted volume in impacted photodiodes because of doping profile modifications which are responsible for the decrease in the charge-to-voltage conversion factor and quantum efficiency. Even if neutron-induced degradations affect all the image sensor performances, results show that this technology is still functional after having absorbed $8.1\times 10^{14}$ n(1 MeV)/cm2. Image sensors are still able to capture an image without significant degradation compared to nonirradiated devices. Such TID radiation-hardened CISs are thus highly promising for applications where both high TID and high neutron fluence radiation tolerance are required.

Neutron radiation effects on linear CCDs at different clock pulse frequency

Combined Reactor Neutron Beam and 60co Γ-Ray Radiation Effects on CMOS APS Image Sensors

Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor

Theoretical and experimental study of the dark signal in CMOS image sensors affected by neutron radiation from a nuclear reactor

Experimental Study on Neutron-Induced Charge Transfer Degradation of Linear Charge Coupled Device

Different Dose Rate Radiation Effects on Linear CCDs

Radiation Effects in Backside-Illuminated CMOS Image Sensors Irradiated by High Energy Neutrons at CSNS-WNS

Influence of Neutron Radiation on Performance of Color CMOS Image Sensors

Mechanism Analysis and Experiment Simulation on Radiation Effects of CCDs

Synergistic Radiation Effects in PPD CMOS Image Sensors Induced by Neutron Displacement Damage and Gamma Ionization Damage

Modeling dark signal of CMOS image sensors irradiated by reactor neutron using Monte Carlo method

Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors

Effect of the Charge-Coupled Image Device's Non-Uniformity by Neutrons

Study on Neutron Displacement Damage Effect in Phototransistor

Effects of Electron and Gamma-Ray Irradiation on Cmos Analog Image Sensors

Dose Rate Effects on Array CCDs Exposed by Co-60 Γ Rays Induce Saturation Output Degradation and Annealing Tests

Degradation of a COTS Linear CCD Induced by Proton Irradiation

Total Dose Radiation Effects on COTS Array CCDs at Low Dose Rate

High Displacement Damage Dose Effects in Radiation Hardened CMOS Image Sensors

Experimental Study of Neutron Induced Background Noise on Gated X-Ray Framing Cameras

Analysis of Experiments on Total Dose Radiation Effects on TCD132D Linear CCD