Abstract:4H-SiC belongs to the family of the third-generation semiconductors and features excellent properties, e.g., high radiation resistance, high charge collection efficiency (CCE), exceptional thermal stability, and low sensitivity to -rays. These advantages make 4H-SiC suitable for developing neutron detectors used in intense neutron fields characteristic of tokamaks. However, 4H-SiC detectors suffer from performance degradation after neutron irradiation to high fluence. The knowledge of the degradation evolution of 4H-SiC detector performance parameters with neutron fluence in specific situations can not only help optimize the detector design but also help understand and even correct experimental data for its better use. The technology computer-aided design (TCAD) software is used here to predict the detailed parameters in 4H-SiC bulk underlying the detector performance degradation resulting from neutron irradiations in the vicinity of experimental advanced superconducting tokamak (EAST) tokamak, a fusion device, and the reason for the detector performance degradation caused by neutron irradiation is analyzed. Our 4H-SiC detector damage analysis model employed in TCAD yields CCE values, which have a reasonable consistency with experimental results obtained in references for neutron fluences up to cm . Additionally, at the neutron fluence of cm , the electric fields within 4H-SiC bulk have significant distortions. Nonetheless, the CCE remains at about 40%, demonstrating an extremely high tolerance to neutron irradiations. Meanwhile, our study reveals that enhancing carrier transport rates and strengthening the field within the sensitive region can effectively mitigate the degradation of detector performance, thereby enhancing the detector's radiation tolerance.

Experimental Study on Neutron-Induced Charge Transfer Degradation of Linear Charge Coupled Device

Effect of the Charge-Coupled Image Device's Non-Uniformity by Neutrons

Study on Neutron Displacement Damage Effect in Phototransistor

Experimental analysis of charge transfer efficiency degradation of charge coupled devices induced by proton irradiation

Simulation on CTE Reduction of CCD Induced by Neutron Irradiation

Neutron radiation effects on linear CCDs at different clock pulse frequency

Degradation of a COTS Linear CCD Induced by Proton Irradiation

Mechanism Analysis and Experiment Simulation on Radiation Effects of CCDs

The accelerated TID degradation induced by neutron irradiation on CMOS microprocessor

Investigation of Neutron Irradiation Effects on the Properties of Au/CdZnTe Junction

The Effects of Gamma Irradiation on Neutron Displacement Sensitivity of Lateral PNP Bipolar Transistors

Charge Collection Studies in Irradiated Hv-Cmos Particle Detectors

Investigation of the Performance Degradation of 4H-SiC Neutron Detectors Using MCNP and TCAD

Synergistic Radiation Effects in PPD CMOS Image Sensors Induced by Neutron Displacement Damage and Gamma Ionization Damage

Experimental Study on Displacement Damage Effects of Anode-Short MOS-Controlled Thyristor

Simulation of Synergistic Effects on Lateral Pnp Bipolar Transistors Induced by Neutron and Gamma Irradiation

Influence of Neutron Radiation on Performance of Color CMOS Image Sensors

Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor

Synergistic Effect of Neutron and Gamma Irradiation on Cmos Integrated Circuits

The Analysis of CCD Sensitive Parameters Degraded by Radiation Damage

Different Dose Rate Radiation Effects on Linear CCDs