Abstract:Silicon photonics is the most promising technology for applications ranging from large-bandwidth, low power consumption datacom transceivers, to wearable health monitoring devices, or optical data-bus for quantum processors. To bring silicon PIC based products to the market, ultra-low loss waveguides would be preferred. In the conventional submicron silicon platforms, higher propagation loss (in the order of ~1 dB/cm) induced by the roughness of the etched sidewalls, as well as higher fiber-to-waveguide coupling loss due to its sub-micron dimensions impose challenges for its deployment in many products. VTT’s thick-SOI technology offers a promising alternative, owing to its lower propagation loss (~0.1 dB/cm), reduced polarization sensitivity, and capacity to handle higher optical power without exciting nonlinear losses. Its micron-scale cross-section enables efficient edge coupling. Exploiting its ultra-low loss, we have demonstrated unprecedented level of integration such as, a 40-channel array waveguide grating (AWG) based mux/de-mux, or a Faraday rotator based on silicon spirals, without employing any magneto-optic material. Now we reduced the propagation loss further, down to record-low 4 dB/m, by controlled annealing of waveguides in 100% pure H2 environment. In our optimized, MPW-compatible annealing process, the atomic mobility of Si smoothens the scallops from etching, without causing any structural deformation of the waveguides. This substantially reduced loss enabled us to develop ultra-high Q ring resonators on our thick-SOI platform, as well as sidewall smoothening for the active components, thereby making our platform a bedrock for the emerging applications such as, quantum computing, biosensors, and 3D imaging.

Low Loss (<0.2db Per Transition) CMOS Compatible Multi-Layer Si3N4-on-SOI Platform with Thermal-Optics Device Integration for Silicon Photonics

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Cmos Compatible Monolithic Multi-Layer Si3n4-On-Soi Platform for Low-Loss High Performance Silicon Photonics Dense Integration

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Ultra-Low Loss Cmos Compatible Multi-Layer Si N-4-On-Soi Platform For 1310nm Wavelength

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Tri-layer Silicon Nitride-on-silicon Photonic Platform for Ultra-Low-loss Crossings and Interlayer Transitions

Low-Loss Silicon Platform for Broadband Mid-Infrared Photonics

Low-Loss Silicon-Photonic Devices for Mid-Infrared Applications

Passive Devices at 2 Μm Wavelength on 200 Mm CMOS-compatible Silicon Photonics Platform [Invited]

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Wafer-Scale Demonstration of Low-Loss (~0.43 dB/cm), High-Bandwidth (> 38 GHz), Silicon Photonics Platform Operating at the C-Band

Ultra-low loss waveguide platform in silicon photonics

300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

Low Loss (~6.45db/cm) Sub-Micron Polycrystalline Silicon Waveguide Integrated with Efficient SiON Waveguide Coupler

Ultralow-Loss Silicon Photonics beyond the Singlemode Regime

New-generation Ultra-Low Loss Silicon Photonic Waveguide and Devices

Ultralow-loss Waveguide Crossing for Photonic Integrated Circuits by Using Inverted Tapers

Low Loss CMOS-compatible Silicon Nitride Photonics Utilizing Reactive Sputtered Thin Films.

Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms and Devices

Dual-layer thick LPCVD SiN waveguides for low-loss photonics on 200 mm wafers