Abstract:Due to the advantages of high power density, high efficiency, and great potential in extreme temperature environments, the GaN high electron mobility transistor (HEMT) device is widely used in circuit systems at high or low temperatures. However, its electrical performance is sensitive to the ambient temperature. Therefore, it is essential to build a model that can accurately characterize the electrical performance of GaN HEMTs at different ambient temperatures, which is also essential for precise circuit design. With the analysis of experiment and theory on the GaN HEMT at different ambient temperatures, an improved model for temperature effect on the DC characteristics of the GaN HEMT is proposed based on EEHEMT model. Considering the influence of the ambient temperature on electrical properties of the GaN HEMT, such as the threshold voltage, the knee voltage, and the saturated current, the model establishes a temperature-dependent function for key parameters in the formula of the drain-source current. Through Verilog-A implementation and simulation on the ICCAP software, the improved model accurately reflects the trend of the electrical performance changes of the GaN HEMT at different ambient temperatures. To further verify the model in this work, the on-wafer measurements at different temperatures including -55, -25, 25 and 75 degrees C are carried out for GaN HEMTs with different sizes, which are developed by Nanjing Electronic Devices Institute. Compared with the measured data, the output characteristics and the transfer characteristics simulated by the proposed model are accurate in an ambient temperature range of -55-75 degrees C, with a relative fitting error less than 5%. The result shows that the improved model is of guiding significance in analyzing the direct current performance and high reliability design of circuits at different temperatures.

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Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Thermal modeling, analysis, and management of high-power GaN transistors

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

FEM Thermal Analysis of High Power GaN-on-diamond HEMTs

Electro-Thermal Simulation of GaN HEMT by Finite Element Method

Physical-Based Simulation Of The Gan-Based Grooved-Anode Planar Gunn Diode

Study on Self-Parallel GaN-Based Terahertz Hetero-Structural Gunn Diode

Modulation of Multidomain in AlGaN/GaN HEMT-Like Planar Gunn Diode

Temperature Effect on the Submicron AlGaN/GaN Gunn Diodes for Terahertz Frequency

Thermal Analysis of GaN Laser Diodes in a Package Structure

Modeling of Temperature Effect on DC Characteristics of Micro Wave GaN Devices

Non-linear thermal resistance model for the simulation of high power GaN-based devices

Study of Thermal Simulation Technology for GaN Power Devices

Evaluation and Analysis of Temperature-Dependent Dynamic $r_{{{\mathrm{ds}}},{{\mathrm{on}}}}$ of GaN Power Devices Considering High-Frequency Operation

Thermal Analysis of AlGaN/GaN HEMTs Considering Anisotropic And Inhomogeneous Thermal Conductivity

Two-temperature Principle for Evaluating Electrothermal Performance of GaN HEMTs

Simulation and Analysis of Thermal Property of GaN-based Flip-chip Light-emitting Diodes