Effect of inserted Al<sub>x</sub>Ga<sub>1-x</sub>N layer on the characteristic of double-channel n-Al<sub>0.3</sub>Ga<sub>0.7</sub>N/GaN/i-Al<sub>x</sub>Ga<sub>1-x</sub>N/GaN HEMT
Cai Jing, Yao Ruo-He, Geng Kui-Wei
DOI: https://doi.org/10.7498/aps.71.20220403
IF: 0.906
2022-01-01
Acta Physica Sinica
Abstract:With the increasing demand for high-temperature,high-frequency, and high-power microwave applications, AlGaN/GaN high electron mobility transistors (HEMT) have attracted much attention in recent years. Two-dimensional electron gas (2DEG) induced by spontaneous polarization and piezoelectric polarization caused by the uneven charge distribution on Ga-N bond and the large tensile strain guarantees the high performance of AlGaN/GaN HEMT. Compared with single-channel devices, dual-channel AlGaN/GaN HEMT have greater application prospects on enhancing the electronic confinement, current drive and alleviating the current collapse. In order to study the physical characteristics, the carrier state and transportation characterization of n-Al<sub>0.3</sub>Ga<sub>0.7</sub>N/GaN/i-Al<sub>x</sub>Ga<sub>1-x</sub>N/GaN multilayer structure are investigated. By calculating the one-dimensional self-consistent Poisson-Schrödinger, the energy band diagram, electric field and charge distribution in the devices are obtained. The 2DEG, alloy disorder and dislocation scattering mechanism in the device are also analyzed by analytical models in which the wave function in finite barriers and Fermi's rule are used.<br>With Al<sub>x</sub>Ga<sub>1-x</sub>N layer from 0 nm to 30 nm and Al content in a range of 0.1-0.2, the concentration of 2DEG localized in the heterointerface is diminished with the two independent variables rising in the first channel. Simultaneously, mobilities limited by alloy disorder scattering are increased monotonically by the greater composition occupation number and the Al<sub>x</sub>Ga<sub>1-x</sub>N thickness proportion. Besides, dislocation scattering on carriers is strengthened in the same quantum well, causing the lower mobility. In the second channel, 2DEG density gets growing when the variables mentioned above is enlarged. The mobility restricted by alloy disorder scattering shows a reverse trend with varying the Al<sub>x</sub>Ga<sub>1-x</sub>N thickness and Al fraction, it has a greater impact on carriers in the parasitic channel due to the lower barrier height and high permeable carriers. Furthermore, the effect of dislocation scattering on channel electrons is gradually weakened, leading to an increasing mobility. In general, The dislocation scattering effect in the second channel is intenser than that in the first channel.