Abstract:In this work, we report an investigation of resonant tunneling diodes (RTDs) with lattice-matched and polarization-matched AlInN/GaN heterostructures using the numerical simulation. Compared with the lattice-matched AlInN/GaN RTDs, the RTDs based on polarization-matched AlInN/GaN hetero-structures exhibit symmetrical conduction band profiles due to eliminating the polarization charge discontinuity, which achieve the equivalence of double barrier transmission coefficients, thereby the relatively high driving current, the high symmetry of current density, and the high peak-to-valley current ratio (PVCR) under the condition of the positive and the negative sweeping voltages. Simulations show that the peak current density approaches 1.2 x 10 7 A/cm(2) at the bias voltage of 0.72V and the PVCR approaches 1.37 at both sweeping voltages. It also shows that under the condition of the same shallow energy level, when the trap density reaches 1 x 10 19 cm(-3), the polarization-matched RTDs still have acceptable negative differential resistance (NDR) characteristics, while the NDR characteristics of lattice-matched RTDs become irregular. After introducing the deeper energy level of 1 eV into the polarization-matched and lattice-matched RTDs, 60 scans are performed under the same trap density. Simulation results show that the degradation of the polarization-matched RTDs is 22%, while lattice-matched RTDs have a degradation of 55%. It can be found that the polarization-matched RTDs have a greater defect tolerance than the lattice-matched RTDs, which is beneficial to the available manufacture of actual terahertz RTD devices. Published by AIP Publishing.

Improved Negative Differential Mobility Model of Gan and Algan for A Terahertz Gunn Diode

Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies

Temperature Effect on the Submicron AlGaN/GaN Gunn Diodes for Terahertz Frequency

Modulation of Multidomain in AlGaN/GaN HEMT-Like Planar Gunn Diode

Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

Enhancement of the Performance of GaN IMPATT Diodes by Negative Differential Mobility

Use of Algan in the Notch Region of Gan Gunn Diodes

Theoretical Investigation Into Negative Differential Resistance Characteristics Of Resonant Tunneling Diodes Based On Lattice-Matched And Polarization-Matched Alinn/Gan Heterostructures

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications

Numerical Investigation of GaN HEMT Terahertz Detection Model Considering Multiple Scattering Mechanisms

Research on the Gunn Oscillation Effect of GaN HEMT with Field Plate Structure in the Terahertz Frequency Band

Theoretical Analysis of AlGaN/GaN Resonant Tunnelling Diodes with Step Heterojunctions Spacer and Sub-Quantum Well

High-performance Negative Differential Resistance Characteristics in Homoepitaxial AlN/GaN Double-Barrier Resonant Tunneling Diodes

Improvement of Small Signal Modeling and Parameter Extraction for AlGaN/GaN High Electron Mobility Transistor

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

High-temperature Carrier Density and Mobility Enhancements in AlGaN/GaN HEMT Using AlN Spacer Layer

An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

Negative Differential Resistance in AlGaAs/GaAs Heterostructures

A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

Room Temperature Asymmetric Negative Differential Resistance Characteristics of AlGaN/GaN Resonant Tunneling Diodes Grown by Metal-Organic Chemical Vapor Deposition