Abstract:The scattering mechanisms governing the transport properties of high mobility AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures with various AIN spacer layer thicknesses from zero to 2 nm were presented. The major scattering processes including acoustic and optical phonons, ionized impurity, interface roughness, dislocation and alloy disorder were applied to the temperature-dependent mobility data. It was found that scattering due mainly to alloy disorder limits the electron mobility for samples having spacer layer thicknesses up to 0.3 nm. On the other hand, alloy scattering is greatly reduced as the AlN spacer layer thickness increases further, and hence the combination of acoustic, optical and interface roughness become operative with different degrees of effectiveness over different temperature ranges. The room-temperature electron mobility was observed to increase gradually as the AlN spacer layer increases. A peak electron mobility of 1630 cm(2) V-1 s(-1) was realized for the sample consisting of a 1 nm AlN spacer layer. Then, the electron mobility decreased for the sample with 2 nm AlN. Moreover, the measured 2DEG densities were also compared with the theoretical predictions, which include both piezoelectric and spontaneous polarization components existing at AlN/GaN interfaces. The experimental sheet carrier densities for all AlInN/AlN/GaN HEMT structures were found to be in excellent agreement with the theoretical predictions when the parasitic (unintentional) GaN layer deposited between AlN and AlInN was taken into account. From these analyses, 1 nm AlN spacer layer thickness is found to be the optimum thickness required for high electron mobility and hence low sheet resistance once the sheet carrier density is increased to the theoretically expected value for the sample without unintentional GaN layer.

High-temperature Carrier Density and Mobility Enhancements in AlGaN/GaN HEMT Using AlN Spacer Layer

The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

Effects of Polycrystalline AlN Film on the Dynamic Performance of AlGaN/GaN High Electron Mobility Transistors

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

High Electron Mobility in Nearly Lattice-Matched AlInN∕AlN∕GaN Heterostructure Field Effect Transistors

AlGaN/GaN/InGaN/GaN DH‐HEMTs Structure with an AlN Interlayer Grown by MOCVD

Algan/Gan/Ingan/Gan Dh-Hemts with Gan Channel Layer Grown at High Temperature

The Influence of 1nm AlN Interlayer on Properties of the Al0.3Ga0.7N/AlN/GaN HEMT Structure

Effect of Electric Field On Electron Mobility in Sub-100 nm InAlN/GaN High Electron Mobility Transistors

AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with Improved Mobility Grown by MOCVD

A 2 Nm Low Temperature Gan Spacer To Improve The Transport Properties Of Two-Dimensional Electron Gas In Algan/Inaln/Aln/Gan Heterostructures

Growth and Characterization of AlGaN/AlN_a/GaN/AlN_b/GaN HEMT Structure Materials

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

Static Characteristics of AlGaN/GaN High Electron Mobility Transistors with Different Thickness of AlGaN Layer

Abnormal increase of 2DEG density in AlGaN/GaN HEMT grown on free-standing GaN substrate

Growth and Characterization of Algan/Aln/Gan/Algan Double Heterojunction Structures with Algan As Buffer Layers

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

Two Dimensional Electron Gas In Gan Heterojunction Field Effect Transistors Structures With Aln Spacer

Numerical Simulation of Two-Dimensional Electron Gas Characteristics of a Novel (inxal1−xn/aln)mqws/gan High Electron Mobility Transistor

MOCVD grown AlGaN/AlN/GaN HEMT structure with compositionally step-graded AlGaN barrier layer