Abstract:The advantages of the properties of GaN over traditional III-V materials are discussed for applications in terahertz (THz) regime. Consequently the GaN-based devices which include electronics and photonics devices are investigated with emphases on the theoretical and practical developments of Quantum Cascade Lasers, Plasma Wave FETs and Negative Differential Resistance diodes. The results demonstrate that GaN is a promising material for THz semiconductor devices with an excellent performance in operating temperature, frequency and output power. It is found that the dislocations in GaN crystal seriously impact on the performance of THz devices. It is also shown that a great progress of MOCVD technique gives the potential in GaN epitaxial growth for THz applications. Finally, our recent jobs in GaN fabrication are revealed to demonstrate the further researches in THz regime. I. Introduction Terahertz (THz) regime, roughly corresponding to the frequencies from 100 GHz to 10 THz (3 mm to 30 μm), has attracted many attentions in the last decade because of its promising applications in medical, biological and industrial imaging, broadband and safety communication, radar, space science, etc. The so called "terahertz gap" implies that a big challenge still occurs for THz technology since it is in the margin of electronics and photonics technologies. There have existed two technology roadmaps for THz semiconductor devices. From low side of THz frequency, the electronics-based devices such as Gunn diode, impact avalanche transit time (IMPATT) diode, resonant tunneling diode which are based on negative differential resistance (NDR), and the nanometer field effective transistors (FET) based on plasma wave, are widely investigated for THz frequencies. From high side, the photonics-based devices such as quantum cascade laser (QCL) extend the emission wavelengths from mid- and far-infrared to THz spectral range. All the efforts are to pursue the effective radiation and detection of terahertz signals. This is due to the fact that the radiation power and the detection sensitivity of THz devices are extremely low compared with the millimeter wave devices and optoelectronic devices (1).

Terahertz oscillation in GaN HEMT-like BEAN diode with a composite contact

Modulation of Multidomain in AlGaN/GaN HEMT-Like Planar Gunn Diode

Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies

Physical-Based Simulation Of The Gan-Based Grooved-Anode Planar Gunn Diode

Research on the Gunn Oscillation Effect of GaN HEMT with Field Plate Structure in the Terahertz Frequency Band

Study on Self-Parallel GaN-Based Terahertz Hetero-Structural Gunn Diode

Current Oscillation in GaN-HEMTs with P-Gan Islands Buried Layer for Terahertz Applications

Ultra-Short Channel Gan High Electron Mobility Transistor-Like Gunn Diode With Composite Contact

GaN-based Semiconductor Devices for Terahertz Technology

Modulation of the Domain Mode in GaN‐based Planar Gunn Diode for Terahertz Applications

Investigation on the sources of 2DEG in AlxGa1-xN/GaN HEMT

Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

Thermal breakdown characteristics and damage mechanisms of novel GaN HEMT aviation nanodevices in high-intensity radiation fields

Simulation Study of Lateral Schottky Barrier IMPATT Diode Based on AlGaN/GaN 2-DEG for Terahertz Applications

Research Progress of GaN HEMT Device Structure

Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications

Study of THz Oscillations in GaN-Based Planar Nanodevices

Plasma-Wave Enhanced THz-Performance of a Nanometer Side-Gated Transistor

Terahertz Performance of A Gan-Based Planar Nanochannel Device

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions

Numerical Study on THz Radiation of Two-Dimensional Plasmon Resonance of GaN HEMT Array