Abstract:Based on the enormous application potential of GaN-based high electron mobility transistors (HEMT) in high-frequency and high-power scenarios, this article focuses mainly on the study of the Gunn oscillation effect of GaN-based HEMT devices. From the perspective of electric field regulation, a sandwich structure GaN HEMT device model with field plate structure is proposed, and a hydrodynamic physical model is established. The negative resistance characteristics in the GaN HEMT are obtained by the finite element method and the influence of the gate field plate on the Gunn oscillation frequency in the device channel is studied. The numerical simulation results show that the suitable field plate structure can modulate the distribution of the channel electric field below the gate, promote the electric field to enter the negative differential mobility region, undergo valley to valley electron transfer, form electron domains, and generate the Gunn oscillation currents in the terahertz band. Meanwhile, the length of the field plate regulates the oscillation current frequency of the device, and the stable and usable terahertz frequency band signal can be realized. This research opens up the possibility for semiconductor solid-state devices to realize terahertz frequency band radiation, and provides the basis for realizing new breakthroughs in HEMT for terahertz applications.

The Modulation of Multi-Domain and Harmonic Wave in a GaN Planar Gunn Diode by Recess Layer

Modulation of Multidomain in AlGaN/GaN HEMT-Like Planar Gunn Diode

Physical-Based Simulation Of The Gan-Based Grooved-Anode Planar Gunn Diode

Modulation of the Domain Mode in GaN‐based Planar Gunn Diode for Terahertz Applications

The Enhancement of the Output Characteristics in the GaN Based Multiple‐channel Planar Gunn Diode

Study on Self-Parallel GaN-Based Terahertz Hetero-Structural Gunn Diode

Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies

Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

Use of Algan in the Notch Region of Gan Gunn Diodes

A High-performance U-band GaAs Gunn Diode

A Novel 220-Ghz GaN Diode On-Chip Tripler with High Driven Power

A Comparative Investigation on Sub-Micrometer InN and GaN Gunn Diodes Working at Terahertz Frequency

Research on the Gunn Oscillation Effect of GaN HEMT with Field Plate Structure in the Terahertz Frequency Band

New Design of Upper Waveguide with Unintentionally Doped InGaN Layer for InGaN-based Laser Diode

Simulation Investigation of Multiple Domain Observed in In0.23Ga0.77As Planar Gunn Diode

Dislocation Blocking by Algan Hot Electron Injecting Layer in the Epitaxial Growth of Gan Terahertz Gunn Diode

Ultra-Short Channel Gan High Electron Mobility Transistor-Like Gunn Diode With Composite Contact

Improved Negative Differential Mobility Model of Gan and Algan for A Terahertz Gunn Diode

Temperature Effect on the Submicron AlGaN/GaN Gunn Diodes for Terahertz Frequency

High-performance Negative Differential Resistance Characteristics in Homoepitaxial AlN/GaN Double-Barrier Resonant Tunneling Diodes

Theoretical Analysis of AlGaN/GaN Resonant Tunnelling Diodes with Step Heterojunctions Spacer and Sub-Quantum Well