Abstract:Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of $n$- and $p$-type doping are highly desirable for high-energy power electronic devices. Recent studies indicate that $\rm ZnGa_2O_4$ may be suitable for these applications, standing out as an alternative to $\rm Ga_2O_3$. The simple face centered cubic spinel structure of $\rm ZnGa_2O_4$ results in isotropic electronic and optical properties, in contrast to the large anisotropic properties of the $\beta$-monoclinic $\rm Ga_2O_3$. In addition, $\rm ZnGa_2O_4$ has shown, on average, better thermal dissipation and potential for $n$- and $p$-type conductivity. Here we use density functional theory and hybrid functional calculations to investigate the electronic, optical, and point defect properties of $\rm ZnGa_2O_4$, focusing on the possibility for $n$- and p-type conductivity. We find that the cation antisite $\rm Ga_{Zn}$ is the lowest energy donor defect that can lead to unintentional $n$-type conductivity. The stability of self-trapped holes (small hole polarons) and the high formation energy of acceptor defects make it difficult to achieve $p$-type conductivity. However, with excess of Zn, forming $\rm Zn_{(1+2x)}Ga_{2(1-x)}O_4$ alloys display an intermediate valence band, facilitating $p$-type conductivity. Due to the localized nature of this intermediate valence band, $p$-type conductivity by polaron hopping is expected, explaining the low mobility and low hole density observed in recent experiments.

The Origin of P-Type Conduction in Li-N Codoped Zno: an Ab Initio Calculation Study

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

The origin of p-type conduction in (P, N) co-doped ZnO

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Revert stable p-type ZnO with LimN complex co-doping from the first-principles study

First-Prinicples Study of Mn-N Co-Doped P-Type Zno

Suppression Of Compensation From Nitrogen And Carbon Related Defects For P-Type N-Doped Zno

Control of P- and N-Type Conductivities in Li-Doped Zno Thin Films

H-Stabilized Shallow Acceptors In N-Doped Zno

Acceptor Formation Mechanisms Determination from Electrical and Optical Properties of P-Type ZnO Doped with Lithium and Nitrogen

A Facile Route to Realize P-Type ZnO Thin Films Via Li–F Codoping: Experiments and Theory

Unintentionally Doped Hydrogen Removal Mechanism in Li Doped ZnO

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

Origin of P-Type Conduction in Cu-doped ZnO Nano-Films Synthesized by Hydrothermal Method Combined with Post-Annealing

The Surface Effect on the P-Type Conductivity of Li-Doped Zno Film

Dominant Factor Determining the Conduction-Type of Nitrogen-Doped Zno Film

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

Non-axial NO-VZn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films

Origin of p-Type Doping in Zinc Oxide Nanowires Induced by Phosphorus Doping: A First Principles Study

Oxygen vacancies: The origin of n-type conductivity in ZnO