Abstract:Abstract The microwave cutoff probe (CP) is an accurate diagnostic technique to measure absolute electron density even in processing gas plasmas. Because this technique needs the installation of two probe tips and a probe body in the plasma chamber, it may cause plasma perturbation in semiconductor plasma processing; this may increase the uncertainty of the measured value. In this work, a flat CP, which is embedded in the substrate chuck or chamber wall, is proposed to measure electron density without plasma perturbation and to monitor processing plasma in real-time. We first evaluated the performance of various types of flat CPs, such as the point CP, ring CP, and bar cutoff probe (BCP), through electromagnetic (EM) field simulation. The BCP showed better performance with clearer cut-off signal characteristics and minimization of noise signals compared with the other probe types. Therefore, we focused on the characteristics of the BCP through experiments and/or EM simulations and concluded the followings: (i) the measured electron densities of the BCP agree well with those of the conventional CP; (ii) the BCP measures the plasma density near the plasma-sheath boundary layer, which is very closely adjacent to the chamber wall or wafer; (iii) it was demonstrated for the first time that the plasma density can be measured, even though the processing wafers such as un-doped silicon, P type silicon, amorphous carbon, or amorphous carbon/SiO 2 patterned wafers were placed on the flat CP; and (iv) we performed real-time measurements of the electron density using the BCP covered with the wafers in plasmas with various process gases, such as Ar, NF 3 , and O 2 . These results indicate that the chuck-embed-type or wall-type flat CP can be used as a real-time electron density measurement (monitoring) tool during industrial plasma processing, such as during etching, deposition, sputtering or implantation, and the chuck-embed-type flat CP can measure the plasma density impinging on the wafer in real-time without stopping the processing.

Theoretical and Experimental Study of the Microwave Cut-off Probe for Electron Density Measurements in Low-Temperature Plasmas

Microwave Reflectometry for Plasma Density Profile Measurements on Hl-2a Tokamak

New Experimental Results Obtained using Microwave Reflectometry in HL-2 A Tokamak

Design of microwave reflectometor on HL-2A tokamak

Microwave Diagnostics System in the HL-2A Tokamak

Research on Plasma Electron Density Distribution Based on Microwave Diffraction

A transmission-line microwave interferometer for plasma electron density measurement

Electron density measurements in low-pressure plasmas using cutoff probes and comparison with hairpin and Langmuir probes

Analysis of uncertainty in measurement of electron temperature in low-pressure inductively coupled plasmas using microwave cutoff probe

Comparative studies of cold/hot probe techniques for accurate plasma measurements

Observation of a nonlinear phenomenon of the density fluctuations on zheda plasma experiment device (ZPED)

Electron density measurement of an ionospheric-like plasma using an impedance probe

Investigation of Electron Density and Temperature in Microwave Plasma Generated by a Cylindrical Teflon Waveguide

Pressure limitation of electron density measurement using a wave-cutoff method in weakly ionized plasmas

Research on Low Pressure Electronic Density Diagnostic Method of Single Paperback Probe Based on Langmuir Probe Theory

Plasma probe characteristics in low density hydrogen pulsed plasmas

Plasma Oscillation Method for Measurements of Absolute Electron Density in Plasma

High-speed plasma measurements with a plasma impedance probe

Flat cutoff probe for real-time electron density measurement in industrial plasma processing

Characteristics of Langmuir Probe in Low Temperature, Weakly Magnetized Plasmas

Probe method to measure the electromagnetic field in a plasma by Poynting vector conversion