Light Extraction Efficiency Improvement and Strain Relaxation in InGaN/GaN Multiple Quantum Well Nanopillars

Jihong Zhu,Liangji Wang,Shuming Zhang,Hui Wang,Degang Zhao,Jianjun Zhu,Zongshun Liu,Desheng Jiang,Hui Yang

DOI: https://doi.org/10.1063/1.3580477

IF: 2.877

2011-01-01

Journal of Applied Physics

Abstract:Light extraction efficiency improvement and strain relaxation were observed in InGaN/GaN multiple quantum well (MQW) nanopillars. InGaN/GaN MQW-based LED nanopillar arrays with different diameters varying from about 120 to 250 nm were fabricated via inductively coupled plasma etching using Ni self-assembled nanodots as etching mask. The ray trace method and TiberCAD were used to calculate the light extraction efficiency and strain relaxation in the nanopillars. Remarkably improved light extraction efficiency and strain relaxation were obtained from the calculation results in the nanopillar structures.