Abstract:High-quality ZnO films were grown on Si(1 0 0) substrates with low-temperature (LT) ZnO buffer layers by an electron cyclotron resonance (ECR)-assisted molecular-beam epitaxy (MBE). In order to investigate the optimized buffer layer temperature, ZnO buffer layers of about 1.1 μm were grown at different growth temperatures of 350, 450 and 550 °C, followed by identical high-temperature (HT) ZnO films with the thickness of 0.7 μm at 550 °C. A ZnO buffer layer with a growth temperature of 450 °C (450 °C-buffer sample) was found to greatly enhance the crystalline quality of the top ZnO film compared to others. The root mean square (RMS) roughness (3.3 nm) of its surface is the smallest, compared to the 350 °C-buffer sample (6.7 nm), the 550 °C-buffer sample (7.4 nm), and the sample without a buffer layer (6.8 nm). X-ray diffraction (XRD), photoluminescence (PL) and Raman scattering measurements were carried out on these samples at room temperature (RT) in order to characterize the crystalline quality of ZnO films. The preferential c-axis orientations of (0 0 2) ZnO were observed in the XRD spectra. The full-width at half-maximum (FWHM) value of the 450 °C-buffer sample was the narrowest as 0.209°, which indicated that the ZnO film with a buffer layer grown at this temperature was better for the subsequent ZnO growth at elevated temperature of 550 °C. Consistent with these results, the 450 °C-buffer sample exhibits the highest intensity and the smallest FWHM (130 meV) of the ultraviolet (UV) emission at 375 nm in the PL spectrum. The ZnO characteristic peak at 438.6 cm−1 was found in Raman scattering spectra for all films with buffers, which is corresponding to the E2 mode.

An Au Buffer Layer for the Growth of a ZnO Sol–gel Film on a Si Substrate

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Effect of Au Buffer Layer on the Structure of ZnO Films Grown on Quartz Substrate

Preparation and Characterization of Na-doped ZnO Thin Films by Sol–gel Method

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Structure and Properties of ZnO Films Grown on Si Substrates with Low Temperature Buffer Layers

ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy

Surface Topography and Optical Properties of Al-doped ZnO Thin Films by Sol-gel Process

Effect of the ZnO buffer layer thickness on AZO film properties

Improvement of the crystallinity and optical properties of sol-gel ZnO thin film by a PVD ZnO buffer layer

Effect of a ZnO Buffer Layer on the Properties of Epitaxial ZnO:Ga Films Deposited on C-Sapphire Substrate

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Effect of Buffer Layer on Growth and Properties of ZnO Nanorod Arrays

ZnO Growth on Si with Low-Temperature ZnO Buffer Layers by ECR-assisted MBE

Improvement of the Structure and Photoelectrical Properties of ZnO Films Based on SiC Buffer Layer Grown on Si(111)

Influence of Substrates in ZnO Devices on the Surface Plasmon Enhanced Light Emission

Effects of SiC Buffer on the Structural and Photoelectrical Properties of ZnO Thin Films Grown on Si(111) by PLD

Preparation and Photoluminescence of ZnO with Nanostructure by Hollow-Cathode Discharge

Effect of ZnO buffer layer on AZO film properties and photovoltaic applications

Photoluminescence of as-grown and annealed ZnO films on Ti-buffered Si(111) substrates

Influence of ZnO buffer layer on microstructure and Raman scattering of ZnO: Ag film on Si substrate