Abstract:II-VI semiconductor heterojunctions show huge potential for application in nanodevice fabrication due to their type-II alignments owing to the better spatial separation of electrons and holes. However, the hetero-epitaxial growth of high-quality heterostructures is still a challenge, especially for materials with large lattice mismatch. In this work, well-aligned single-crystalline ZnO/ZnS core/shell nanorod arrays were obtained by introducing an Al2O3 buffer layer. It is interesting that the nature of the ZnS layer varies with the thickness of the Al2O3 layer. When Al2O3 is less than 2 nm, the interaction between the substrate and epilayer is strong enough to penetrate through the buffer layer, enabling the growth of ZnS on Al2O3-coated ZnO nanorod arrays. On the basis of detailed characterization, a rational growth mechanism of the core/shell heterostructure is proposed, in which the Al2O3 interlayer can eliminate voids due to the Kirkendall effect around the interface and accommodate a misfit dislocation between the inner ZnO and outer ZnS, resulting in more sufficient strain relaxation in the epitaxy. In addition, cathodoluminescence measurements demonstrate that the optical properties of the ZnO/ZnS heterostructure could be effectively improved by taking advantage of the thin Al2O3. The I-V curves characterized by PeakForce tunneling atomic force microscopy reveal that the heterostructure shows a typical rectifying behavior and good photoresponse to ultraviolet light. These findings may provide a reasonable and effective strategy for the growth of highly lattice-mismatched heterostructure arrays buffered by the Al2O3 layer, broadening the options for fabricating heterojunctions and promoting their applications in optoelectronic devices.

Effect of Buffer Layer on Growth and Properties of ZnO Nanorod Arrays

Effect of UV irradiation on the properties of ZnO nanorod arrays prepared by hydrothermal method

Effect of Electrodeposition Time on Microstructure, Wettability and Optical Properties of ZnO Nanorod Arrays

Effect of Cu Additions on Morphology and Optical Properties of ZnO Nanorod Arrays by Two-Step Method

Effect of the ZnO buffer layer thickness on AZO film properties

Effects of Electrodeposition Electrolyte Concentration on Microstructure, Optical Properties and Wettability of ZnO Nanorods

Effects of Position, Thickness, and Annealing Temperature of Ag Buffer Layer on the Shape of ZnO Nanocrystals Grown by a Simple Hydrothermal Process

ZnO Nanorod Arrays Grown on an AlN Buffer Layer and Their Enhanced Ultraviolet Emission

Effect of Seed Layer on Structural Properties of ZnO Nanorod Arrays Grown by Vapor-Phase Transport

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Effect of a ZnO Buffer Layer on the Properties of Epitaxial ZnO:Ga Films Deposited on C-Sapphire Substrate

ZnO Nanorod Arrays: Field-assisted Growth in Aqueous Solution and Field Emission Properties

Alignment-controlled Hydrothermal Growth of Well-Aligned ZnO Nanorod Arrays

Fabrication and Growth Mechanism of ZnO Nanorods by Electrochemical Method

Al2O3 buffer-facilitated epitaxial growth of high-quality ZnO/ZnS core/shell nanorod arrays

ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy

Effects of Growth Time on Morphologies of ZnO Nanorod Arrays

Influence of Different Substrates on ZnO Nanorod Arrays Properties

Effect of Growth and Annealing on ZnO Buffer by MOCVD

Synthesis and field emission characteristics of bilayered ZnO nanorod array prepared by chemical reaction.

Low-Temperature Synthesis and Optical Property of ZnO Nanorod Arrays