Abstract:II-VI semiconductor heterojunctions show huge potential for application in nanodevice fabrication due to their type-II alignments owing to the better spatial separation of electrons and holes. However, the hetero-epitaxial growth of high-quality heterostructures is still a challenge, especially for materials with large lattice mismatch. In this work, well-aligned single-crystalline ZnO/ZnS core/shell nanorod arrays were obtained by introducing an Al2O3 buffer layer. It is interesting that the nature of the ZnS layer varies with the thickness of the Al2O3 layer. When Al2O3 is less than 2 nm, the interaction between the substrate and epilayer is strong enough to penetrate through the buffer layer, enabling the growth of ZnS on Al2O3-coated ZnO nanorod arrays. On the basis of detailed characterization, a rational growth mechanism of the core/shell heterostructure is proposed, in which the Al2O3 interlayer can eliminate voids due to the Kirkendall effect around the interface and accommodate a misfit dislocation between the inner ZnO and outer ZnS, resulting in more sufficient strain relaxation in the epitaxy. In addition, cathodoluminescence measurements demonstrate that the optical properties of the ZnO/ZnS heterostructure could be effectively improved by taking advantage of the thin Al2O3. The I-V curves characterized by PeakForce tunneling atomic force microscopy reveal that the heterostructure shows a typical rectifying behavior and good photoresponse to ultraviolet light. These findings may provide a reasonable and effective strategy for the growth of highly lattice-mismatched heterostructure arrays buffered by the Al2O3 layer, broadening the options for fabricating heterojunctions and promoting their applications in optoelectronic devices.

ZnO Nanorod Arrays Grown on an AlN Buffer Layer and Their Enhanced Ultraviolet Emission

Performance Improvement of Ultraviolet Sensor of ZnO Nanorod Arrays

Enhanced the UV Response of AlN Coated ZnO Nanorods Photodetector

Effect of Buffer Layer on Growth and Properties of ZnO Nanorod Arrays

Al2O3 buffer-facilitated epitaxial growth of high-quality ZnO/ZnS core/shell nanorod arrays

ZnO Nanorod Array Grown on Ag Layer: A Highly Efficient Fluorescence Enhancement Platform

CuO/ZnO Heterojunction Nanorod Arrays Prepared by Photochemical Method with Improved UV Detecting Performance

Preparation and Photoluminescence Properties of ZnO Nanowire/Nanorod Mix Arrays

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

ZnO Nanorod Arrays: Field-assisted Growth in Aqueous Solution and Field Emission Properties

Arrays of Nanorods Composed of ZnO Nanodots Exhibiting Enhanced UV Emission and Stability.

ZnO Nanorod Array/cualo2nanofiber Heterojunction on Ni Substrate: Synthesis and Photoelectrochemical Properties

Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition

Growth Mechanism and Photoluminescent Properties of AlN/ZnO Heterostructures

Synthesis of vertically aligned Al-doped ZnO nanorods array with controllable Al concentration

Structural, Photoluminescence, and Field Emission Properties of Vertically Well-Aligned Zno Nanorod Arrays

Enhanced ultraviolet emission and improved spatial distribution uniformity of ZnO nanorod array light-emitting diodes via Ag nanoparticles decoration

Synthesis and optoelectronic properties of arrayed p-type ZnO nanorods grown on ZnO film/Si wafer in aqueous solutions

Fabrication of AlGaN Nanorods with Different Al Compositions for Emission Enhancement in UV Range

Heteroepitaxial Growth of ZnO Nanorod Arrays on GaAs (111) Substrates by Electrochemical Deposition

Zno Nanorod Arrays: Synchronous Preparation And Pl Performances