Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition

shangbin zhu,hongliang lu,qiuxiang zhang,yuan zhang,qingqing sun,peng zhou,shijin ding,david wei zhang
DOI: https://doi.org/10.1116/1.4903935
2015-01-01
Abstract:The AlN/ZnO bilayer heterostructures were deposited on Si (100) substrate by thermal atomic layer deposition. X-ray diffraction results show that the crystallinity of polycrystalline ZnO layer is enhanced by amorphous AlN capping layer. Compared with ZnO thin film, ZnO/AlN bilayer with 10.7 nm AlN capping layer exhibits three times enhanced near band edge (NBE) emission from the photoluminescence measurements. In addition, the near band edge emission from the ZnO can be further increased by similar to 10 times through rapid thermal annealing at 600 degrees C. The underlying mechanisms for the enhancement of the NBE emission after coating AlN capping layer and thermal treatment are discussed. These results suggest that coating of a thin AlN layer and sequential thermal treatments can effectively tailor the luminescence properties of ZnO film. (C) 2014 American Vacuum Society.
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