Abstract:II-VI semiconductor heterojunctions show huge potential for application in nanodevice fabrication due to their type-II alignments owing to the better spatial separation of electrons and holes. However, the hetero-epitaxial growth of high-quality heterostructures is still a challenge, especially for materials with large lattice mismatch. In this work, well-aligned single-crystalline ZnO/ZnS core/shell nanorod arrays were obtained by introducing an Al2O3 buffer layer. It is interesting that the nature of the ZnS layer varies with the thickness of the Al2O3 layer. When Al2O3 is less than 2 nm, the interaction between the substrate and epilayer is strong enough to penetrate through the buffer layer, enabling the growth of ZnS on Al2O3-coated ZnO nanorod arrays. On the basis of detailed characterization, a rational growth mechanism of the core/shell heterostructure is proposed, in which the Al2O3 interlayer can eliminate voids due to the Kirkendall effect around the interface and accommodate a misfit dislocation between the inner ZnO and outer ZnS, resulting in more sufficient strain relaxation in the epitaxy. In addition, cathodoluminescence measurements demonstrate that the optical properties of the ZnO/ZnS heterostructure could be effectively improved by taking advantage of the thin Al2O3. The I-V curves characterized by PeakForce tunneling atomic force microscopy reveal that the heterostructure shows a typical rectifying behavior and good photoresponse to ultraviolet light. These findings may provide a reasonable and effective strategy for the growth of highly lattice-mismatched heterostructure arrays buffered by the Al2O3 layer, broadening the options for fabricating heterojunctions and promoting their applications in optoelectronic devices.

Growth Mechanism and Photoluminescent Properties of AlN/ZnO Heterostructures

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition

Preparation and Photoluminescence of ZnO with Nanostructure by Hollow-Cathode Discharge

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

Highly Uv Luminescent Zno Microtetrapod-On-Nanowire Hybrids

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Controlled Synthesis, Structural Evolution, and Photoluminescence Properties of Nanoscale One-Dimensional Hierarchical Zno/Zns Heterostructures

Structure and Optical Properties of Individual Hierarchical ZnS Nanobelt/zno Nanorod Heterostructures

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

Surface-Plasmon Mediated Photoluminescence Enhancement of Pt-Coated Zno Nanowires by Inserting an Atomic-Layer-Deposited Al2o3 Spacer Layer

Photoluminescence enhancement of ZnO nanowire arrays by atomic layer deposition of ZrO2 layers and thermal annealing.

Interfacially Al-doped ZnO Nanowires: Greatly Enhanced Near Band Edge Emission Through Suppressed Electron-Phonon Coupling and Confined Optical Field.

Enhanced Photoluminescence and Raman Properties of Al-Doped ZnO Nanostructures Prepared Using Thermal Chemical Vapor Deposition of Methanol Assisted with Heated Brass

Surface modification effect on photoluminescence of individual ZnO nanorods with different diameters.

Preparation and optical properties of ZnO/ZnS heterostructured nanomaterials

Morphology Evolution, Growth Mechanism and Optical Properties of AlN Nanostructures

Enhanced Photoluminescence and Electrical Properties of n-Al-Doped ZnO Nanorods/p-B-Doped Diamond Heterojunction

Al2O3 buffer-facilitated epitaxial growth of high-quality ZnO/ZnS core/shell nanorod arrays

Facile Synthesis and Photoluminescence Mechanism of ZnO Nanowires Decorated with Cu Nanoparticles Grown by Atomic Layer Deposition