Oxidation behavior of ZrB 2-SiC ultra-high temperature ceramics under low atmospheric pressure

ChengYi Tian,Dong Gao,Yue Zhang
2011-01-01
Abstract:To investigate the effect of atmospheric pressure on the oxidation behavior of ZrB 2-SiC ultra-high temperature ceramics (UHTCs), oxidation behavior of ZrB 2-SiC UHTCs was studied under atmospheric pressure of 5.3 kPa and 12.1 kPa. The experiment results showed that the oxidation resistance of ZrB 2-SiC UHTCs decreased with the reduction of atmospheric pressure. And high SiC content was beneficial to the oxidation resistance of the materials at higher atmospheric pressure, whereas it was detrimental to oxidation resistance at lower atmospheric pressure. In addition, when ZrB 2-SiC UHTCs were oxidized at low atmospheric pressure, the overall oxidation kinetics process was consistent with parabolic law, although SiC underwent active oxidation.
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