Abstract:The reversible laser‐induced phase transition of Sb2S3 is investigated, focusing specifically on the mechanisms that drive the optical amorphization, with multi‐physics considerations including optical and thermal properties of the PCM and its environment. Comparison to experimental results enables a better understanding of the physics behind the optical change of phases in Sb2S3 layers, its limitations and how to overcome them. Phase change materials (PCMs) have gained a tremendous interest as a means to actively tune nanophotonic devices through the large optical modulation produced by their amorphous to crystalline reversible transition. Recently, materials such as Sb2S3 emerged as particularly promising low loss PCMs, with both large refractive index modulations and transparency in the visible and near‐infrared. Controlling the local and reversible phase transition in this material is of major importance for future applications, and an appealing method to do so is to exploit pulsed lasers. Yet, the physics and limits involved in the optical switching of Sb2S3 are not yet well understood. Here, the reversible laser‐induced phase transition of Sb2S3 is investigated, focusing specifically on the mechanisms that drive the optically induced amorphization, with multi‐physics considerations including the optical and thermal properties of the PCM and its environment. The laser energy threshold for reversibly changing the phase of the PCM is determined through both theoretical analysis and experimental investigation, not only between fully amorphous and crystalline states but also between partially recrystallized states. Then, the non‐negligible impact of the material's polycrystallinity and anisotropy on the power thresholds for optical switching is revealed. Finally, the challenges related to laser amorphization of thick Sb2S3 layers are addressed, as well as strategies to overcome them. These results enable a qualitative and quantitative understanding of the physics behind the optically‐induced reversible change of phase in Sb2S3 layers.

Changes of optical, dielectric, and structural properties of Si 15Sb85 phase change memory thin films under different initializing laser power

Optical and structural properties of Sb and Sb-rich SiSb thin films

Characterizations of electronic and optical properties of Sb-based phase-change material stabilized by alloying Cr

Phase Transition Characteristics of Al-Sb Phase Change Materials for Phase Change Memory Application

Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

Crystallization behavior and electrical characteristics of Ga–Sb thin films for phase change memory

Optical Properties and Local Structure Evolution During Crystallization of Ga16Sb84 Alloy

Sb-Rich Si-Sb-Te Phase Change Material for Multilevel Data Storage: the Degree of Disorder in the Crystalline State

Study on the crystallization of Mg35Sb65/Sn15Sb85 superlattice-like films for phase change memory application

Study on Optical Constants of Laser-Induced Crystalline Ag11In12Te26Sb51 Phase-Change Media

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb 2 Te 3 Phase-Change Thin Film by Inserting Sn 15 Sb 85 Layers

Picosecond laser pulse-driven crystallization behavior of SiSb phase change memory thin films

Uncovering the physical properties, structural characteristics, and electronic application of superlattice-like Ti/Sb phase-change thin films

Performance optimization of Sn15Sb85 phase change material via introducing multilayer structure

Thickness-Dependent Crystallization of Ultrathin Antimony Thin Films for Monatomic Multilevel Reflectance and Phase Change Memory Designs

Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

Laser-induced Changes on the Complex Refractive Indices of Phase-Change Thin Film

Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application

Reversible Single‐Pulse Laser‐Induced Phase Change of Sb2S3 Thin Films: Multi‐Physics Modeling and Experimental Demonstrations

C-Sb Materials As Candidate for Phase-Change Memory

Characteristics of Si-Sb-Te Films for Phase Change Memory