Abstract:Hydrogenation of the ZnO:Ga network has been chosen as a promising avenue to further upgrade the optoelectronic and structural properties of the films. With an optimum incorporation of hydrogen at a low substrate temperature (TS = 100 °C) in RF magnetron sputtering plasma, the ZnO:Ga:H film, with a large crystallite size (∼17 nm) and improved crystallinity along the optimally preferred c-axis orientation with respect to both the 〈100〉 (I〈002〉/I〈100〉 ∼ 74) and 〈103〉 (I〈002〉/I〈103〉 ∼ 10) directions, attains a high electrical conductivity (σ ∼ 1.5 × 10(3)) and ∼90% visible range optical transmission that yields a wide optical band gap of ∼3.78 eV. The dominant c-axis orientation of the ZnO crystals exhibits a distinct UV luminescence band at ∼340 nm that arises as a result of the typical exciton emission or near-band-edge emission, which occurs due to the recombination of photo-generated electrons and holes in the valence band or in traps near the valence band. Vacancies created by the out diffusion of oxygen from the network induces the growth along the 〈103〉 crystallographic orientation. With the introduction of an optimum amount of hydrogen into the network, the VO peak (OII) in the O 1s XPS spectrum significantly reduces in intensity while the Zn-OH peak (OIII) increases, indicating enhanced surface absorption of O species, which causes the improvement of c-axis orientation. The increase in the conductivity has been attributed to the centers assigned to isolated hydrogen atoms in the anti-bonding sites (ABO) or bond-centered sites of O-Zn bonds (BC), and Zn vacancies passivated by one or two hydrogen atoms. Hydrogen-induced dopant-like defects in the film and the associated large amount of tensile stress developed within the network has been correlated to the high conductivity and the wide band gap of the ZnO:Ga:H film due to the decreased repulsion between the O 2p and the Zn 4s bands and the Burstein-Moss effect as a consequence of the increased carrier concentration. Highly conducting and transparent c-axis oriented ZnO:Ga:H films grown by a device compatible process at a low TS are extremely useful for various stacked layer thin film devices, including solar cells.

Growth and Characteristics of Hydrogenated Ga-doped ZnO Thin Films by Pulsed DC Magnetron Sputtering at Room Temperature

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited -ZnO Thin Films and Applications in p-i-n -Si:H Thin-Film Solar Cells

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Effect of Magnesium Doping on the Light-Induced Hydrophilicity of Zno Thin Films

Improvement of Transparent Conductive Properties of GZO/Cu/GZO Tri-Layer Films by Introducing H2 into Sputtering Atmosphere

Influence of Water Content in Mixed Solvent on Surface Morphology, Wettability, and Photoconductivity of ZnO Thin Films

The properties of surface textured ZnO:Al films grown in hydrogen atmosphere

Transparent and Conductive Ga-doped ZnO Films Grown by RF Magnetron Sputtering on Polycarbonate Substrates

Effects of Hydrogen Flux on Aluminum Doped Zinc Thin Films by Pulsed Magnetron Sputtering

Room-temperature growth and optoelectronic properties of GZO/ZnO bilayer films on polycarbonate substrates by magnetron sputtering

F, Mg and Ga co-doped ZnO transparent conductive thin films by dual-target magnetron sputtering: Fabrication, structure, and characteristics

Effect of hydrogen in controlling the structural orientation of ZnO:Ga:H as transparent conducting oxide films suitable for applications in stacked layer devices

Tailoring the Morphology, Optical and Electrical Properties of DC-sputtered ZnO:Al Films by Post Thermal and Plasma Treatments

Properties of Hydorogenated Al-Doped ZnO Films by Multi-Step Texture

Influences of the RF power ratio on the optical and electrical properties of GZO thin films by DC coupled RF magnetron sputtering at room temperature

Investigation of the Structural, Electrical, and Optical Properties of the Nano-Scale GZO Thin Films on Glass and Flexible Polyimide Substrates

Growth of Textured ZnO Thin Films and Their Front Electrodes for Application in Solar Cells

Modified Textured Surface MOCVD-ZnO:B Transparent Conductive Layers for Thin-Film Solar Cells

High optoelectronic performance of magnetron sputtered ZnO thin films co-doped with F and Ga: Experiment and first-principles calculations

Structural, Optical and Electrical Properties of Ga Doped ZnO/Cu Grid/ga Doped ZnO Transparent Electrodes